A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening / Betti Beneventi, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 62:1(2015), pp. 6971197.44-6971197.51. [10.1109/TED.2014.2371071]
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening
BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015
Abstract
A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.File | Dimensione | Formato | |
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