A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening
BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015
Abstract
A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
PP Optimization_of_a_Pocketed_Dual.pdf
Open Access dal 03/12/2016
Tipo:
Postprint
Licenza:
Licenza per accesso libero gratuito
Dimensione
3.32 MB
Formato
Adobe PDF
|
3.32 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
