A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015

Abstract

A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.
Betti Beneventi, Giovanni; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/463570
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