A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.
BETTI BENEVENTI, G., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G. (2015). Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(1), 44-51 [10.1109/TED.2014.2371071].
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening
BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015
Abstract
A dual-metal-gate (DMG) tunnel FET (TFET) integrating a heavily-doped pocket within the channel is optimized through TCAD simulations by considering quantization-induced bandgap widening. First, the performance penalty due to the reduced tunneling probability is estimated and next, device design options to minimize the negative impact of quantization on the DMG-TFET performance are assessed.| File | Dimensione | Formato | |
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PP Optimization_of_a_Pocketed_Dual.pdf
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