A novel approach to optimize tunnel field effect transistors (TFETs) by technology computer aided design simulations is reported. The most interesting outcome of our design effort is a dual metal gate (DMG) TFET, which features an inverse subthreshold slope (SS) significantly < 60 mV/decade over more than five orders of magnitude of drain current, with a minimum value of 6 mV/decade sustained across one drain current decade or more. The DMGTFET simultaneously fulfills both the low-stand-by-power off-state current and the high-performance on-state current at a supply voltage of 0.5 V. Therefore, 25% reduction of static power consumption is expected compared with the 2020 International Technology Roadmap for Semiconductors requirements for multigate transistors.
BETTI BENEVENTI, G., Gnani, E., Gnudi, A., Reggiani, S., Baccarani, G. (2014). Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61, 776-784 [10.1109/TED.2014.2298212].
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current
BETTI BENEVENTI, GIOVANNI;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2014
Abstract
A novel approach to optimize tunnel field effect transistors (TFETs) by technology computer aided design simulations is reported. The most interesting outcome of our design effort is a dual metal gate (DMG) TFET, which features an inverse subthreshold slope (SS) significantly < 60 mV/decade over more than five orders of magnitude of drain current, with a minimum value of 6 mV/decade sustained across one drain current decade or more. The DMGTFET simultaneously fulfills both the low-stand-by-power off-state current and the high-performance on-state current at a supply voltage of 0.5 V. Therefore, 25% reduction of static power consumption is expected compared with the 2020 International Technology Roadmap for Semiconductors requirements for multigate transistors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
