In this work we examine and validate a recently-published model for the junctionless (JL) nanowire FET with cylindrical geometry by carrying out extensive comparisons with TCAD simulation results over a wide range of impurity concentrations and device diameters.
E. Gnani, S. Reggiani, A. Gnudi, G. Baccarani (2011). A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor. s.l : s.n [10.1109/ISDRS.2011.6135150].
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor
GNANI, ELENA;REGGIANI, SUSANNA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2011
Abstract
In this work we examine and validate a recently-published model for the junctionless (JL) nanowire FET with cylindrical geometry by carrying out extensive comparisons with TCAD simulation results over a wide range of impurity concentrations and device diameters.File in questo prodotto:
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