The low-field channel mobility of graphene nanoribbon (GNR) FETs is investigated through an atomistic full-quantum numerical model including elastic acoustic phonon (AP) scattering and edge roughness (ER), the latter being treated via a direct statistical approach. We find that, for narrow GNRs (W = 1 ÷ 2 nm), quantum localization effects due to ER become important, so that it is not possible to define an ER limited mobility. In this regime, the inclusion of AP scattering results in a current increase rather than decrease, due to phase breaking, which partially recovers the ohmic regime. The resulting total mobility extracted from a long channel GNR-FET biased in the ON-state is not far from the measured mobility of a GNR of comparable dimensions.

Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects

IMPERIALE, ILARIA;GRASSI, ROBERTO;GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2010

Abstract

The low-field channel mobility of graphene nanoribbon (GNR) FETs is investigated through an atomistic full-quantum numerical model including elastic acoustic phonon (AP) scattering and edge roughness (ER), the latter being treated via a direct statistical approach. We find that, for narrow GNRs (W = 1 ÷ 2 nm), quantum localization effects due to ER become important, so that it is not possible to define an ER limited mobility. In this regime, the inclusion of AP scattering results in a current increase rather than decrease, due to phase breaking, which partially recovers the ohmic regime. The resulting total mobility extracted from a long channel GNR-FET biased in the ON-state is not far from the measured mobility of a GNR of comparable dimensions.
Proc. of the 11th International Conference on Ultimate Integration on Silicon
57
60
I. Imperiale; R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/96179
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact