In this work we investigate band structure effects on the current-voltage characteristics of ultra-scaled silicon nanowire (SNW) FETs. A new approach is used for the computation of quantum transport which accounts for the complete periodic shape of the 1DEG energy subbands. The main findings of our model are: i) a possible negative output conductance for small cross-sections due to the finite energy extension of the sub-bands; ii) an increase of the transit time due to a reduced average velocity and, iii) a worsening of the subthreshold slope for short channel lengths.

Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs

GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2007

Abstract

In this work we investigate band structure effects on the current-voltage characteristics of ultra-scaled silicon nanowire (SNW) FETs. A new approach is used for the computation of quantum transport which accounts for the complete periodic shape of the 1DEG energy subbands. The main findings of our model are: i) a possible negative output conductance for small cross-sections due to the finite energy extension of the sub-bands; ii) an increase of the transit time due to a reduced average velocity and, iii) a worsening of the subthreshold slope for short channel lengths.
Technical Digest of the International Electron Device Meeting (IEDM 2007)
101
104
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/51259
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