Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses have been studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K.
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments / S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher. - STAMPA. - (2005), pp. 411-414. (Intervento presentato al convegno European Solid-State Device Research Conference (ESSDERC 2005) tenutosi a Grenoble nel 11-15 Settembre 2005).
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments
REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO;
2005
Abstract
Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses have been studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
