Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses have been studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K.
Titolo: | Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments |
Autore/i: | REGGIANI, SUSANNA; GNANI, ELENA; RUDAN, MASSIMO; BACCARANI, GIORGIO; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher |
Autore/i Unibo: | |
Anno: | 2005 |
Titolo del libro: | Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005) |
Pagina iniziale: | 411 |
Pagina finale: | 414 |
Abstract: | Different protection diodes are investigated with electro-thermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses have been studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K. |
Data prodotto definitivo in UGOV: | 12-ott-2005 |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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