In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22nm Double-Gate and 32nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
P. Palestri, C. Alexander, A. Asenov, G. Baccarani, A. Bournel, M. Braccioli, et al. (2009). Comparison of Advanced Transport Models for Nanoscale nMOSFETs. AACHEN : s.n [10.1109/ULIS.2009.4897554].
Comparison of Advanced Transport Models for Nanoscale nMOSFETs
BACCARANI, GIORGIO;FIEGNA, CLAUDIO;REGGIANI, SUSANNA;SANGIORGI, ENRICO;SILVESTRI, LUCA;
2009
Abstract
In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22nm Double-Gate and 32nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
