In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22nm Double-Gate and 32nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
Comparison of Advanced Transport Models for Nanoscale nMOSFETs / P. Palestri; C. Alexander; A. Asenov; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfus; A. Esposito; D. Esseni; A. Ghetti; C. Fiegna; G. Fiori; V. Aubry-Fortuna; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; J. Walczak. - STAMPA. - (2009), pp. 125-128. (Intervento presentato al convegno Ultimate Integration on Silicon Conference (ULIS 2009) tenutosi a Aachen, Germany nel 18-21 marzo, 2009) [10.1109/ULIS.2009.4897554].
Comparison of Advanced Transport Models for Nanoscale nMOSFETs
BACCARANI, GIORGIO;FIEGNA, CLAUDIO;REGGIANI, SUSANNA;SANGIORGI, ENRICO;SILVESTRI, LUCA;
2009
Abstract
In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22nm Double-Gate and 32nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
