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SILVESTRI, LUCA

SILVESTRI, LUCA  

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Risultati 1 - 11 di 11 (tempo di esecuzione: 0.022 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B.... Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak 2009-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani. 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2010-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Comparison of Advanced Transport Models for Nanoscale nMOSFETs P. Palestri; C. Alexander; A. Asenov; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfu...s; A. Esposito; D. Esseni; A. Ghetti; C. Fiegna; G. Fiori; V. Aubry-Fortuna; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; J. Walczak 2009-01-01 - s.n 4.01 Contributo in Atti di convegno -
Drain current computation in nanoscale nMOSFETs: Comparison of transport models Sangiorgi E.; Alexander C.; Asenov A.; Aubry-Fortuna V.; Baccarani G.; Bournel A.; Braccioli M.; ...Cheng B.; Dollfus P.; Esposito A.; Esseni D.; Fenouillet-Beranger C.; Fiegna C.; Fiori G.; Ghetti A.; Iannaccone G.; Martinez A.; Majkusiak B.; Monfray S.; Palestri P.; Peikert V.;
Reggiani S.; Riddet C.; Saint-Martin J.; Schenk A.; Selmi L.; Silvestri L.; Toniutti P.; Walczak J.; 		2010-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani 2008-01-01 - IEEE Press 4.01 Contributo in Atti di convegno -
High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs V. Passi; F. Ravaux; E. Dubois; S. Clavaguera; A. Carella; C. Celle;
J. Simonato; L. Silvestri; S.... Reggiani; D. Vuillaume; J. Raskin 		2011-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress L. Silvestri; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani. 2010-01-01 - s.n 4.01 Contributo in Atti di convegno -
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions S. Reggiani; L. Silvestri; A. Cacciatori; E. Gnani; A. Gnudi; G. Baccarani 2007-01-01 - s.n 4.01 Contributo in Atti di convegno -
Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani 2008-01-01 - s.n 4.01 Contributo in Atti di convegno -