SILVESTRI, LUCA
SILVESTRI, LUCA
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009 P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations
2010 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani.
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles
2010 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films
2010 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
Comparison of Advanced Transport Models for Nanoscale nMOSFETs
2009 P. Palestri; C. Alexander; A. Asenov; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfus; A. Esposito; D. Esseni; A. Ghetti; C. Fiegna; G. Fiori; V. Aubry-Fortuna; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; J. Walczak
Drain current computation in nanoscale nMOSFETs: Comparison of transport models
2010 Sangiorgi E.; Alexander C.; Asenov A.; Aubry-Fortuna V.; Baccarani G.; Bournel A.; Braccioli M.; Cheng B.; Dollfus P.; Esposito A.; Esseni D.; Fenouillet-Beranger C.; Fiegna C.; Fiori G.; Ghetti A.; Iannaccone G.; Martinez A.; Majkusiak B.; Monfray S.; Palestri P.; Peikert V.; Reggiani S.; Riddet C.; Saint-Martin J.; Schenk A.; Selmi L.; Silvestri L.; Toniutti P.; Walczak J.;
Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study
2008 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani
High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs
2011 V. Passi; F. Ravaux; E. Dubois; S. Clavaguera; A. Carella; C. Celle; J. Simonato; L. Silvestri; S. Reggiani; D. Vuillaume; J. Raskin
Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress
2010 L. Silvestri; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani.
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions
2007 S. Reggiani; L. Silvestri; A. Cacciatori; E. Gnani; A. Gnudi; G. Baccarani
Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation
2008 Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G.
Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation
2008 L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | P. Palestri; C. Alexander; A. Asenov; V. Aubry-Fortuna; G. Baccarani; A. Bournel; M. Braccioli; B.... Cheng; P. Dollfus; A. Esposito; D. Esseni; C. Fenouillet-Beranger; C. Fiegna; G. Fiori; A. Ghetti; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; V. Peikert; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; P. Toniutti; J. Walczak | 2009-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani. | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2010-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Comparison of Advanced Transport Models for Nanoscale nMOSFETs | P. Palestri; C. Alexander; A. Asenov; G. Baccarani; A. Bournel; M. Braccioli; B. Cheng; P. Dollfu...s; A. Esposito; D. Esseni; A. Ghetti; C. Fiegna; G. Fiori; V. Aubry-Fortuna; G. Iannaccone; A. Martinez; B. Majkusiak; S. Monfray; S. Reggiani; C. Riddet; J. Saint-Martin; E. Sangiorgi; A. Schenk; L. Selmi; L. Silvestri; J. Walczak | 2009-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Drain current computation in nanoscale nMOSFETs: Comparison of transport models |
Sangiorgi E.; Alexander C.; Asenov A.; Aubry-Fortuna V.; Baccarani G.; Bournel A.; Braccioli M.; ...Cheng B.; Dollfus P.; Esposito A.; Esseni D.; Fenouillet-Beranger C.; Fiegna C.; Fiori G.; Ghetti A.; Iannaccone G.; Martinez A.; Majkusiak B.; Monfray S.; Palestri P.; Peikert V.; Reggiani S.; Riddet C.; Saint-Martin J.; Schenk A.; Selmi L.; Silvestri L.; Toniutti P.; Walczak J.; |
2010-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani | 2008-01-01 | - | IEEE Press | 4.01 Contributo in Atti di convegno | - |
| High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs |
V. Passi; F. Ravaux; E. Dubois; S. Clavaguera; A. Carella; C. Celle; J. Simonato; L. Silvestri; S.... Reggiani; D. Vuillaume; J. Raskin |
2011-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress | L. Silvestri; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani. | 2010-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions | S. Reggiani; L. Silvestri; A. Cacciatori; E. Gnani; A. Gnudi; G. Baccarani | 2007-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation | Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G. | 2008-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation | L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani | 2008-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |