An easy-to-implement electron mobility model, which accurately predicts low-field mobility in the channel of bulk MOSFETs and UTB-SOI FETs fabricated on different crystal orientations is developed. The model accounts for the influence of surface orientation and in-plane current-flow direction on effective masses, subband repopulation and scattering rates. The paper is divided in two parts. In Part I the general features of the model are presented taking into account phonon, Coulomb and surface roughness scattering. Band and repopulation effects are addressed based on the solution of the Schr¨odinger-Poisson equations. The effects of interface states and ultra-thin body are treated in the accompaning Part II.
L. Silvestri, S. Reggiani, E. Gnani, A. Gnudi, G. Baccarani (2010). A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles. IEEE TRANSACTIONS ON ELECTRON DEVICES, 57, 1567-1574 [10.1109/TED.2010.2049210].
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles
SILVESTRI, LUCA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2010
Abstract
An easy-to-implement electron mobility model, which accurately predicts low-field mobility in the channel of bulk MOSFETs and UTB-SOI FETs fabricated on different crystal orientations is developed. The model accounts for the influence of surface orientation and in-plane current-flow direction on effective masses, subband repopulation and scattering rates. The paper is divided in two parts. In Part I the general features of the model are presented taking into account phonon, Coulomb and surface roughness scattering. Band and repopulation effects are addressed based on the solution of the Schr¨odinger-Poisson equations. The effects of interface states and ultra-thin body are treated in the accompaning Part II.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
