An easy-to-implement electron mobility model, which accurately predicts low-field mobility in the channel of bulk MOSFETs and UTB-SOI FETs fabricated on different crystal orientations is developed. The model accounts for the influence of surface orientation and in-plane current-flow direction on effective masses, subband repopulation and scattering rates. The paper is divided in two parts. In Part I the general features of the model are presented taking into account phonon, Coulomb and surface roughness scattering. Band and repopulation effects are addressed based on the solution of the Schr¨odinger-Poisson equations. The effects of interface states and ultra-thin body are treated in the accompaning Part II.

A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles

SILVESTRI, LUCA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2010

Abstract

An easy-to-implement electron mobility model, which accurately predicts low-field mobility in the channel of bulk MOSFETs and UTB-SOI FETs fabricated on different crystal orientations is developed. The model accounts for the influence of surface orientation and in-plane current-flow direction on effective masses, subband repopulation and scattering rates. The paper is divided in two parts. In Part I the general features of the model are presented taking into account phonon, Coulomb and surface roughness scattering. Band and repopulation effects are addressed based on the solution of the Schr¨odinger-Poisson equations. The effects of interface states and ultra-thin body are treated in the accompaning Part II.
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/92531
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