A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO2/HfO2 gate stacks, and silicon under biaxial or uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model.
S. Reggiani, L. Silvestri, A. Cacciatori, E. Gnani, A. Gnudi, G. Baccarani (2007). Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions. s.l : s.n.
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions
REGGIANI, SUSANNA;SILVESTRI, LUCA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2007
Abstract
A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO2/HfO2 gate stacks, and silicon under biaxial or uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model.File in questo prodotto:
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