A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO2/HfO2 gate stacks, and silicon under biaxial or uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model.
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions
REGGIANI, SUSANNA;SILVESTRI, LUCA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2007
Abstract
A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO2/HfO2 gate stacks, and silicon under biaxial or uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model.File in questo prodotto:
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