In this work we propose a unified model for the low-field effective electron mobility in SOI and DG-MOSFETs with ultrathin SiO2/HfO2 gate stacks, different substrate and channel orientations and uniaxial stress conditions. The model accounts for quantum-confinement effects in the MOSFET channel. Next, we apply this mobility model to a 1D quantum drift-diffusion (QDD) transport model in order to investigate the extent to which the low-field mobility impacts the I-V characteristics. Short (L = 22 nm) DG-FETs, where mobility is affected by quantum-confinement effects, ultrathin SiO2/HfO2 gate stacks and metal gate, have been investigated. Finally, the correlations between the mobility enhancement induced by uniaxial stress in a 22 nm DG-FET, the on-current and transconductance are examined.

L. Silvestri, S. Reggiani, E. Gnani, A. Gnudi, M. Rudan, G.Baccarani (2008). Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study. BOSTON, MA : IEEE Press.

Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study

SILVESTRI, LUCA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;RUDAN, MASSIMO;BACCARANI, GIORGIO
2008

Abstract

In this work we propose a unified model for the low-field effective electron mobility in SOI and DG-MOSFETs with ultrathin SiO2/HfO2 gate stacks, different substrate and channel orientations and uniaxial stress conditions. The model accounts for quantum-confinement effects in the MOSFET channel. Next, we apply this mobility model to a 1D quantum drift-diffusion (QDD) transport model in order to investigate the extent to which the low-field mobility impacts the I-V characteristics. Short (L = 22 nm) DG-FETs, where mobility is affected by quantum-confinement effects, ultrathin SiO2/HfO2 gate stacks and metal gate, have been investigated. Finally, the correlations between the mobility enhancement induced by uniaxial stress in a 22 nm DG-FET, the on-current and transconductance are examined.
2008
Proceedings of the IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems
7
10
L. Silvestri, S. Reggiani, E. Gnani, A. Gnudi, M. Rudan, G.Baccarani (2008). Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study. BOSTON, MA : IEEE Press.
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/66501
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