This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-oninsulator (SOI) FETs with different crystal orientations. By taking into account the influence of surface-orientation and current-flow direction on effective masses, carrier repopulation, and scattering rates, the experimentally observed mobilities are nicely reproduced for MOSFETs with silicon thicknesses down to 5 nm. The model has been implemented in a quantum drift-diffusion transport solver (QDD) and the effect of crystal orientation on SOI-MOSFET characteristics is investigated. © 2008 IEEE.

Silvestri L., Reggiani S., Gnani E., Gnudi A., Baccarani G. (2008). Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation [10.1109/ULIS.2008.4527156].

Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation

Silvestri L.;Reggiani S.;Gnani E.;Gnudi A.;Baccarani G.
2008

Abstract

This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-oninsulator (SOI) FETs with different crystal orientations. By taking into account the influence of surface-orientation and current-flow direction on effective masses, carrier repopulation, and scattering rates, the experimentally observed mobilities are nicely reproduced for MOSFETs with silicon thicknesses down to 5 nm. The model has been implemented in a quantum drift-diffusion transport solver (QDD) and the effect of crystal orientation on SOI-MOSFET characteristics is investigated. © 2008 IEEE.
2008
ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
129
132
Silvestri L., Reggiani S., Gnani E., Gnudi A., Baccarani G. (2008). Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation [10.1109/ULIS.2008.4527156].
Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/895736
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