This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-oninsulator (SOI) FETs with different crystal orientations. By taking into account the influence of surface-orientation and current-flow direction on effective masses, carrier repopulation, and scattering rates, the experimentally observed mobilities are nicely reproduced for MOSFETs with silicon thicknesses down to 5 nm. The model has been implemented in a quantum drift-diffusion transport solver (QDD) and the effect of crystal orientation on SOI-MOSFET characteristics is investigated. © 2008 IEEE.
Silvestri L., Reggiani S., Gnani E., Gnudi A., Baccarani G. (2008). Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation [10.1109/ULIS.2008.4527156].
Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation
Silvestri L.;Reggiani S.;Gnani E.;Gnudi A.;Baccarani G.
2008
Abstract
This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-oninsulator (SOI) FETs with different crystal orientations. By taking into account the influence of surface-orientation and current-flow direction on effective masses, carrier repopulation, and scattering rates, the experimentally observed mobilities are nicely reproduced for MOSFETs with silicon thicknesses down to 5 nm. The model has been implemented in a quantum drift-diffusion transport solver (QDD) and the effect of crystal orientation on SOI-MOSFET characteristics is investigated. © 2008 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
