The top-down fabrication of doped p-type siliconnanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynylbenzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous simulant, and both static and dynamic measurements were performed. A current gain of 4 × 10^6 is obtained upon the detection of the subpart-per-million concentration of a nerve-agent simulant. This represents a four-decade improvement over previous demonstration based on nanoribbons, proving better sensing capabilities of NWs. Technology-computer-aided-design simulations before and after gas detection have been performed to gain insight into the physical mechanisms involved in the gas detection and to investigate the impact of the surface-to-volume ratio on sensor sensitivity.

V. Passi, F. Ravaux, E. Dubois, S. Clavaguera, A. Carella, C. Celle, et al. (2011). High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs. IEEE ELECTRON DEVICE LETTERS, 32, 976-978 [10.1109/LED.2011.2146750].

High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

SILVESTRI, LUCA;REGGIANI, SUSANNA;
2011

Abstract

The top-down fabrication of doped p-type siliconnanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynylbenzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous simulant, and both static and dynamic measurements were performed. A current gain of 4 × 10^6 is obtained upon the detection of the subpart-per-million concentration of a nerve-agent simulant. This represents a four-decade improvement over previous demonstration based on nanoribbons, proving better sensing capabilities of NWs. Technology-computer-aided-design simulations before and after gas detection have been performed to gain insight into the physical mechanisms involved in the gas detection and to investigate the impact of the surface-to-volume ratio on sensor sensitivity.
2011
V. Passi, F. Ravaux, E. Dubois, S. Clavaguera, A. Carella, C. Celle, et al. (2011). High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs. IEEE ELECTRON DEVICE LETTERS, 32, 976-978 [10.1109/LED.2011.2146750].
V. Passi; F. Ravaux; E. Dubois; S. Clavaguera; A. Carella; C. Celle; J. Simonato; L. Silvestri; S. Reggiani; D. Vuillaume; J. Raskin
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/107019
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