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EnglishIn this paper, together with the accompanying Part I, an easy-to-implement electron mobility model which accurately predicts low-field mobility in bulkMOSFETs and UTB-SOI FETs fabricated on different crystal orientations is developed. In Part I, the general features of the model have been presented. In this Part II, the effects induced by extremely-small silicon thicknesses are addressed, namely, the scattering induced by interface states and silicon thickness fluctuations, intervalley-phonon scattering suppression, and surface optical phonons. Besides, corrections necessary for double-gate FETs are considered. This allows to extend the validity of the model presented in Part I to single and double-gate FETs with silicon thicknesses as small as about 2.5 nm.
| Titolo: | A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films |
| Autore/i: | SILVESTRI, LUCA; REGGIANI, SUSANNA; GNANI, ELENA; GNUDI, ANTONIO; BACCARANI, GIORGIO |
| Autore/i Unibo: | |
| Anno: | 2010 |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TED.2010.2049211 |
| Abstract: | In this paper, together with the accompanying Part I, an easy-to-implement electron mobility model which accurately predicts low-field mobility in bulkMOSFETs and UTB-SOI FETs fabricated on different crystal orientations is developed. In Part I, the general features of the model have been presented. In this Part II, the effects induced by extremely-small silicon thicknesses are addressed, namely, the scattering induced by interface states and silicon thickness fluctuations, intervalley-phonon scattering suppression, and surface optical phonons. Besides, corrections necessary for double-gate FETs are considered. This allows to extend the validity of the model presented in Part I to single and double-gate FETs with silicon thicknesses as small as about 2.5 nm. |
| Data prodotto definitivo in UGOV: | 2010-11-17 12:02:38 |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11585/92533
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