This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-on-insulator (SOI) FETs with different crystal orientations. By taking into account the influence of surface-orientation and current-flow direction on effective masses, carrier repopulation, and scattering rates, the experimentally observed mobilities are nicely reproduced for MOSFETs with silicon thicknesses down to 5 nm. The model has been implemented in a quantum drift-diffusion transport solver (QDD) and the effect of crystal orientation on SOI-MOSFET characteristics is investigated.
L. Silvestri, S. Reggiani, E. Gnani, A. Gnudi, G. Baccarani (2008). Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation. UDINE : s.n.
Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation
SILVESTRI, LUCA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2008
Abstract
This paper presents a novel unified model of the low-field electron mobility for bulk and silicon-on-insulator (SOI) FETs with different crystal orientations. By taking into account the influence of surface-orientation and current-flow direction on effective masses, carrier repopulation, and scattering rates, the experimentally observed mobilities are nicely reproduced for MOSFETs with silicon thicknesses down to 5 nm. The model has been implemented in a quantum drift-diffusion transport solver (QDD) and the effect of crystal orientation on SOI-MOSFET characteristics is investigated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
