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EnglishA new analytical model for the electron and hole low-field mobility in ultra-thin body structures with differently-oriented channels and accounting for the effects of high- stacks, metal gates and complex stress configurations has been developed and calibrated on planar FETs. The new model is used to compute the effective mobility of non-planar Fin- FETs averaging the top- and sidewall-channel mobilities. A good agreement with a wide number of experiments is achieved.
| Titolo: | Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress | |
| Autore/i: | SILVESTRI, LUCA; REGGIANI, SUSANNA; GNUDI, ANTONIO; GNANI, ELENA; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2010 | |
| Titolo del libro: | Porc. of the 11th International Conference on Ultimate Integration on Silicon | |
| Pagina iniziale: | 73 | |
| Pagina finale: | 76 | |
| Abstract: | A new analytical model for the electron and hole low-field mobility in ultra-thin body structures with differently-oriented channels and accounting for the effects of high- stacks, metal gates and complex stress configurations has been developed and calibrated on planar FETs. The new model is used to compute the effective mobility of non-planar Fin- FETs averaging the top- and sidewall-channel mobilities. A good agreement with a wide number of experiments is achieved. | |
| Data prodotto definitivo in UGOV: | 25-gen-2011 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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