A new analytical model for the electron and hole low-field mobility in ultra-thin body structures with differently-oriented channels and accounting for the effects of high- stacks, metal gates and complex stress configurations has been developed and calibrated on planar FETs. The new model is used to compute the effective mobility of non-planar Fin- FETs averaging the top- and sidewall-channel mobilities. A good agreement with a wide number of experiments is achieved.

Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress

SILVESTRI, LUCA;REGGIANI, SUSANNA;GNUDI, ANTONIO;GNANI, ELENA;BACCARANI, GIORGIO
2010

Abstract

A new analytical model for the electron and hole low-field mobility in ultra-thin body structures with differently-oriented channels and accounting for the effects of high- stacks, metal gates and complex stress configurations has been developed and calibrated on planar FETs. The new model is used to compute the effective mobility of non-planar Fin- FETs averaging the top- and sidewall-channel mobilities. A good agreement with a wide number of experiments is achieved.
Porc. of the 11th International Conference on Ultimate Integration on Silicon
73
76
L. Silvestri; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/96165
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