An easy-to-implement hole mobility model, which accurately predicts low-field mobility in bulk MOSFETs and ultrathin-body (UTB) silicon-on-insulator FETs with different crystal orientations, is developed. The model accounts for the influence of the surface orientation and the inplane current-flow direction on effective masses, subband repopulation, and scattering rates. The effects induced by extremely small silicon thicknesses are also addressed. A good agreement with the experimental mobilities of bulk and UTB FETs with silicon thicknesses from 60 nm to values as small as about 2.7 and 2.3 nm is demonstrated for devices with (100) and (110) substrates, respectively.
L. Silvestri, S. Reggiani, E. Gnani, A. Gnudi, G. Baccarani. (2010). A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations. IEEE TRANSACTIONS ON ELECTRON DEVICES, 57, 3287-3294 [10.1109/TED.2010.2078821].
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations
SILVESTRI, LUCA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2010
Abstract
An easy-to-implement hole mobility model, which accurately predicts low-field mobility in bulk MOSFETs and ultrathin-body (UTB) silicon-on-insulator FETs with different crystal orientations, is developed. The model accounts for the influence of the surface orientation and the inplane current-flow direction on effective masses, subband repopulation, and scattering rates. The effects induced by extremely small silicon thicknesses are also addressed. A good agreement with the experimental mobilities of bulk and UTB FETs with silicon thicknesses from 60 nm to values as small as about 2.7 and 2.3 nm is demonstrated for devices with (100) and (110) substrates, respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
