FIEGNA, CLAUDIO
FIEGNA, CLAUDIO
DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Docenti di ruolo di Ia fascia
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
2024 Millesimo M.; Fiegna C.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Tallarico A.N.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N.; Bakeroot B.
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
2024 Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangiorgi E.; Fiegna C.
Positive Bias Temperature Instability in SiC-Based Power MOSFETs
2024 Volosov V.; Bevilacqua S.; Anoldo L.; Tosto G.; Fontana E.; Russo A.-L.; Fiegna C.; Sangiorgi E.; Tallarico A.N.
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs
2023 Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C.
Role of interface/border traps on the threshold voltage instability of SiC power transistors
2023 Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallarico A.N.
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress
2023 Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C.; Tallarico A.N.
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter
2022 Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C.
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
2022 Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N.
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
2022 Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
2022 Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N.
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
2021 Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N.
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors
2020 Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C.
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
2020 Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C.
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors
2020 Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G.
Characterization and Modeling of BTI in SiC MOSFETs
2019 Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F.
Gate Reliability of p-GaN HEMT with Gate Metal Retraction
2019 Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C.
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
2019 Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zheng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A.
TCAD predictions of hot-electron injection in p-type LDMOS transistors
2019 F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation
2019 Tallarico A.N.; Stoffels S.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate | Millesimo M.; Fiegna C.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Tallaric...o A.N. | 2024-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N....; Bakeroot B. | 2024-01-01 | - | Springer Science and Business Media Deutschland GmbH | 4.01 Contributo in Atti di convegno | - |
| P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime | Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangi...orgi E.; Fiegna C. | 2024-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | P-GaN_Gate_HEMTs_A_Solution_to_Improve_the_High-Temperature_Gate_Lifetime.pdf |
| Positive Bias Temperature Instability in SiC-Based Power MOSFETs | Volosov V.; Bevilacqua S.; Anoldo L.; Tosto G.; Fontana E.; Russo A.-L.; Fiegna C.; Sangiorgi E.;... Tallarico A.N. | 2024-01-01 | MICROMACHINES | - | 1.01 Articolo in rivista | - |
| In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs | Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | In-Circuit_Assessment_of_the_Long-Term_Reliability_of_E-Mode_GaN_HEMTs.pdf |
| Role of interface/border traps on the threshold voltage instability of SiC power transistors | Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallari...co A.N. | 2023-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | post_print_INFOS_SSE.pdf |
| Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress | Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C....; Tallarico A.N. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf |
| A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter | Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. | 2022-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition | Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. | 2022-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs | Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fie...gna C. | 2022-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Post_print_version.pdf |
| The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs | Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. | 2022-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_of_p-GaN_HEMTs.pdf; The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_postprint.pdf |
| High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs | Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Final_Manuscript_merged.pdf |
| Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors | Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C. | 2020-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 09129112.pdf; post-print.pdf |
| Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate | Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. | 2020-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | role of the AlGaN post print.pdf |
| TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors | Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rosse...tti M.; Croce G. | 2020-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | TCAD simulation POST PRINT.pdf |
| Characterization and Modeling of BTI in SiC MOSFETs | Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Con...sentino G.; Crupi F. | 2019-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | 08901761 (1).pdf; combinepdfESSDERC2019.pdf |
| Gate Reliability of p-GaN HEMT with Gate Metal Retraction | Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. | 2019-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability | Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zhe...ng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A. | 2019-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| TCAD predictions of hot-electron injection in p-type LDMOS transistors | F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Mol...fese, S. Manzini, R. Depetro, G. Croce | 2019-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation | Tallarico A.N.; Stoffels S.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C. | 2019-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | Post-print version.pdf |