FIEGNA, CLAUDIO

FIEGNA, CLAUDIO  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Docenti di ruolo di Ia fascia  

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Risultati 1 - 20 di 159 (tempo di esecuzione: 0.045 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N....; Bakeroot B. 2024-01-01 - Springer Science and Business Media Deutschland GmbH 4.01 Contributo in Atti di convegno -
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. 2023-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista In-Circuit_Assessment_of_the_Long-Term_Reliability_of_E-Mode_GaN_HEMTs.pdf
Role of interface/border traps on the threshold voltage instability of SiC power transistors Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallari...co A.N. 2023-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista post_print_INFOS_SSE.pdf
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C....; Tallarico A.N. 2023-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. 2022-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. 2022-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fie...gna C. 2022-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Post_print_version.pdf
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. 2022-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_of_p-GaN_HEMTs.pdfThe_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_postprint.pdf
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. 2021-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Final_Manuscript_merged.pdf
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C. 2020-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno 09129112.pdfpost-print.pdf
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. 2020-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista role of the AlGaN post print.pdf
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rosse...tti M.; Croce G. 2020-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista TCAD simulation POST PRINT.pdf
Characterization and Modeling of BTI in SiC MOSFETs Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Con...sentino G.; Crupi F. 2019-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno 08901761 (1).pdfcombinepdfESSDERC2019.pdf
Gate Reliability of p-GaN HEMT with Gate Metal Retraction Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. 2019-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zhe...ng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A. 2019-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD predictions of hot-electron injection in p-type LDMOS transistors F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Mol...fese, S. Manzini, R. Depetro, G. Croce 2019-01-01 - - 4.01 Contributo in Atti di convegno -
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation Tallarico A.N.; Stoffels S.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C. 2019-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista Post-print version.pdf
Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2on Al surfaces for micromirror applications Cianci, E.*; Lamperti, A.; Tallarida, G.; Zanuccoli, M.; Fiegna, C.; Lamagna, L.; Losa, S.; Rossi...ni, S.; Vercesi, F.; Gatti, D.; Wiemer, C. 2018-01-01 SENSORS AND ACTUATORS. A, PHYSICAL - 1.01 Articolo in rivista -
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts Massimo, Nicolai; Mauro, Zanuccoli; Frank, Feldmann; Martin, Hermle; Claudio, Fiegna 2018-01-01 IEEE JOURNAL OF PHOTOVOLTAICS - 1.01 Articolo in rivista am_Analysis of Silicon Solar Cells With Poly-SiSiOx.pdf
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea ...Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio 2018-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Hot-Carrier Degradation in Power LDMOS_ Drain Bias Dependence and Lifetime Evaluation.pdfPost-print_Version.pdf