FIEGNA, CLAUDIO
FIEGNA, CLAUDIO
DEI - DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Docenti di ruolo di Ia fascia
HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack
2025 Tallarico, A. N.; Millesimo, M.; Ibrar, U.; Sangiorgi, E.; Fiegna, C.; Yang, T. -Y.; Wu, J. -S.; Iwai, H.; Chang, E. -Y.
Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress
2025 Millesimo, M.; Fiegna, C.; Smerzi, S. A.; Iucolano, F.; Cioni, M.; Russo, A.; Bevilacqua, S.; Tallarico, A. N.
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature
2025 Millesimo, M.; Valentini, L.; Fiegna, C.; Sangiorgi, E.; Tallarico, A. N.; Borga, M.; Posthuma, N.; Decoutere, S.; Bakeroot, B.
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
2024 Millesimo, M.; Fiegna, C.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Tallarico, A. N.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Posthuma, N.; Bakeroot, B.
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
2024 Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangiorgi E.; Fiegna C.
Positive Bias Temperature Instability in SiC-Based Power MOSFETs
2024 Volosov, V.; Bevilacqua, S.; Anoldo, L.; Tosto, G.; Fontana, E.; Russo, A. -L.; Fiegna, C.; Sangiorgi, E.; Tallarico, A. N.
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs
2023 Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C.
Role of interface/border traps on the threshold voltage instability of SiC power transistors
2023 Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallarico A.N.
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress
2023 Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C.; Tallarico A.N.
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter
2022 Capasso, G.; Zanuccoli, M.; Tallarico, A. N.; Fiegna, C.
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
2022 Millesimo, M.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N.
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
2022 Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
2022 Millesimo, M.; Borga, M.; Bakeroot, B.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N.
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
2021 Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N.
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors
2020 Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C.
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
2020 Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C.
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors
2020 Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G.
Characterization and Modeling of BTI in SiC MOSFETs
2019 Cornigli, D.; Tallarico, A. N.; Reggiani, S.; Fiegna, C.; Sangiorgi, E.; Sanchez, L.; Valdivieso, C.; Consentino, G.; Crupi, F.
Gate Reliability of p-GaN HEMT with Gate Metal Retraction
2019 Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack | Tallarico, A. N.; Millesimo, M.; Ibrar, U.; Sangiorgi, E.; Fiegna, C.; Yang, T. -Y.; Wu, J. -S.; ...Iwai, H.; Chang, E. -Y. | 2025-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress | Millesimo, M.; Fiegna, C.; Smerzi, S. A.; Iucolano, F.; Cioni, M.; Russo, A.; Bevilacqua, S.; Tal...larico, A. N. | 2025-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Post_print.pdf |
| RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature | Millesimo, M.; Valentini, L.; Fiegna, C.; Sangiorgi, E.; Tallarico, A. N.; Borga, M.; Posthuma, N....; Decoutere, S.; Bakeroot, B. | 2025-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | post_print.pdf |
| Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate | Millesimo, M.; Fiegna, C.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; T...allarico, A. N. | 2024-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 2024037627 1_merged.pdf |
| GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Po...sthuma, N.; Bakeroot, B. | 2024-01-01 | - | Springer Science and Business Media Deutschland GmbH | 4.01 Contributo in Atti di convegno | SIE_2023_.pdf |
| P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime | Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangi...orgi E.; Fiegna C. | 2024-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | P-GaN_Gate_HEMTs_A_Solution_to_Improve_the_High-Temperature_Gate_Lifetime.pdf |
| Positive Bias Temperature Instability in SiC-Based Power MOSFETs | Volosov, V.; Bevilacqua, S.; Anoldo, L.; Tosto, G.; Fontana, E.; Russo, A. -L.; Fiegna, C.; Sangi...orgi, E.; Tallarico, A. N. | 2024-01-01 | MICROMACHINES | - | 1.01 Articolo in rivista | micromachines-15-00872-v2 (1).pdf |
| In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs | Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | In-Circuit_Assessment_of_the_Long-Term_Reliability_of_E-Mode_GaN_HEMTs.pdf |
| Role of interface/border traps on the threshold voltage instability of SiC power transistors | Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallari...co A.N. | 2023-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | post_print_INFOS_SSE.pdf |
| Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress | Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C....; Tallarico A.N. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf |
| A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter | Capasso, G.; Zanuccoli, M.; Tallarico, A. N.; Fiegna, C. | 2022-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | post_print.pdf |
| Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition | Millesimo, M.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; T...allarico, A. N. | 2022-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 2022010836_merged.pdf |
| TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs | Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fie...gna C. | 2022-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Post_print_version.pdf |
| The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs | Millesimo, M.; Borga, M.; Bakeroot, B.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; T...allarico, A. N. | 2022-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_postprint.pdf |
| High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs | Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Final_Manuscript_merged.pdf |
| Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors | Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C. | 2020-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 09129112.pdf; post-print.pdf |
| Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate | Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. | 2020-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | role of the AlGaN post print.pdf |
| TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors | Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rosse...tti M.; Croce G. | 2020-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | TCAD simulation POST PRINT.pdf |
| Characterization and Modeling of BTI in SiC MOSFETs | Cornigli, D.; Tallarico, A. N.; Reggiani, S.; Fiegna, C.; Sangiorgi, E.; Sanchez, L.; Valdivieso,... C.; Consentino, G.; Crupi, F. | 2019-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | 08901761 (1).pdf; combinepdfESSDERC2019.pdf |
| Gate Reliability of p-GaN HEMT with Gate Metal Retraction | Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. | 2019-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |