SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the role of an additional interface degradation. In order to fully understand the role played by the latter mechanisms, TCAD simulations have been calibrated in order to reproduce the experimental results.

Characterization and Modeling of BTI in SiC MOSFETs

Cornigli D.;Tallarico A. N.;Reggiani S.;Fiegna C.;Sangiorgi E.;
2019

Abstract

SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the role of an additional interface degradation. In order to fully understand the role played by the latter mechanisms, TCAD simulations have been calibrated in order to reproduce the experimental results.
European Solid-State Device Research Conference
82
85
Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F.
File in questo prodotto:
File Dimensione Formato  
08901761 (1).pdf

accesso riservato

Tipo: Versione (PDF) editoriale
Licenza: Licenza per accesso riservato
Dimensione 897.03 kB
Formato Adobe PDF
897.03 kB Adobe PDF   Visualizza/Apri   Contatta l'autore
combinepdfESSDERC2019.pdf

accesso aperto

Tipo: Postprint
Licenza: Licenza per accesso libero gratuito
Dimensione 596.67 kB
Formato Adobe PDF
596.67 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/728313
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 2
social impact