SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the role of an additional interface degradation. In order to fully understand the role played by the latter mechanisms, TCAD simulations have been calibrated in order to reproduce the experimental results.
Cornigli D., Tallarico A.N., Reggiani S., Fiegna C., Sangiorgi E., Sanchez L., et al. (2019). Characterization and Modeling of BTI in SiC MOSFETs. Editions Frontieres [10.1109/ESSDERC.2019.8901761].
Characterization and Modeling of BTI in SiC MOSFETs
Cornigli D.;Tallarico A. N.;Reggiani S.;Fiegna C.;Sangiorgi E.;
2019
Abstract
SiC power MOSFETs have been investigated by performing two different kinds of measurements, the hysteresis between two adjecent sweeps and the positive bias temperature instability, at different temperatures. The threshold hysteresis is a measure of the switching dynamics of the interface traps, while measurements at long stress times can reveal the role of an additional interface degradation. In order to fully understand the role played by the latter mechanisms, TCAD simulations have been calibrated in order to reproduce the experimental results.| File | Dimensione | Formato | |
|---|---|---|---|
|
08901761 (1).pdf
accesso riservato
Tipo:
Versione (PDF) editoriale
Licenza:
Licenza per accesso riservato
Dimensione
897.03 kB
Formato
Adobe PDF
|
897.03 kB | Adobe PDF | Visualizza/Apri Contatta l'autore |
|
combinepdfESSDERC2019.pdf
accesso aperto
Tipo:
Postprint
Licenza:
Licenza per accesso libero gratuito
Dimensione
596.67 kB
Formato
Adobe PDF
|
596.67 kB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
