TALLARICO, ANDREA NATALE
TALLARICO, ANDREA NATALE
DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"
Docenti di ruolo di IIa fascia
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
2024 Millesimo M.; Fiegna C.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Tallarico A.N.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N.; Bakeroot B.
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
2024 Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangiorgi E.; Fiegna C.
Positive Bias Temperature Instability in SiC-Based Power MOSFETs
2024 Volosov V.; Bevilacqua S.; Anoldo L.; Tosto G.; Fontana E.; Russo A.-L.; Fiegna C.; Sangiorgi E.; Tallarico A.N.
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs
2023 Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C.
Role of interface/border traps on the threshold voltage instability of SiC power transistors
2023 Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallarico A.N.
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress
2023 Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C.; Tallarico A.N.
SiC MOSFETs performance modeling in Simulink Simscape environment
2023 Ferretti, Jacopo; Schiapparelli, Giacomo-Piero; Sangiorgi, Enrico; Tallarico, Andrea Natale
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter
2022 Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C.
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
2022 Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N.
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
2022 Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
2022 Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallarico A.N.
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
2021 Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N.
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts
2021 Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N.
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation
2021 Magnone, P.; Tallarico, A.N.; Pistollato, S.; Depetro, R.; Croce, G.
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors
2020 Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C.
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate
2020 Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C.
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors
2020 Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G.
An integrated DC/DC converter with online monitoring of hot-carrier degradation
2019 Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A.
Characterization and Modeling of BTI in SiC MOSFETs
2019 Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate | Millesimo M.; Fiegna C.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Tallaric...o A.N. | 2024-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N....; Bakeroot B. | 2024-01-01 | - | Springer Science and Business Media Deutschland GmbH | 4.01 Contributo in Atti di convegno | - |
| P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime | Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangi...orgi E.; Fiegna C. | 2024-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | P-GaN_Gate_HEMTs_A_Solution_to_Improve_the_High-Temperature_Gate_Lifetime.pdf |
| Positive Bias Temperature Instability in SiC-Based Power MOSFETs | Volosov V.; Bevilacqua S.; Anoldo L.; Tosto G.; Fontana E.; Russo A.-L.; Fiegna C.; Sangiorgi E.;... Tallarico A.N. | 2024-01-01 | MICROMACHINES | - | 1.01 Articolo in rivista | - |
| In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs | Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | In-Circuit_Assessment_of_the_Long-Term_Reliability_of_E-Mode_GaN_HEMTs.pdf |
| Role of interface/border traps on the threshold voltage instability of SiC power transistors | Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallari...co A.N. | 2023-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | post_print_INFOS_SSE.pdf |
| Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress | Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C....; Tallarico A.N. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf |
| SiC MOSFETs performance modeling in Simulink Simscape environment | Ferretti, Jacopo; Schiapparelli, Giacomo-Piero; Sangiorgi, Enrico; Tallarico, Andrea Natale | 2023-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter | Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. | 2022-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition | Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. | 2022-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs | Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fie...gna C. | 2022-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Post_print_version.pdf |
| The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs | Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. | 2022-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_of_p-GaN_HEMTs.pdf; The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_postprint.pdf |
| High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs | Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Final_Manuscript_merged.pdf |
| Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts | Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - | 1.01 Articolo in rivista | Post_print_version.pdf |
| Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation | Magnone, P.; Tallarico, A.N.; Pistollato, S.; Depetro, R.; Croce, G. | 2021-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | Post_print_merged.pdf |
| Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors | Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C. | 2020-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 09129112.pdf; post-print.pdf |
| Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate | Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. | 2020-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | role of the AlGaN post print.pdf |
| TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors | Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rosse...tti M.; Croce G. | 2020-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | TCAD simulation POST PRINT.pdf |
| An integrated DC/DC converter with online monitoring of hot-carrier degradation | Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A. | 2019-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | R2Power300_icecs2019_maybefinal shortref.pdf |
| Characterization and Modeling of BTI in SiC MOSFETs | Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Con...sentino G.; Crupi F. | 2019-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | 08901761 (1).pdf; combinepdfESSDERC2019.pdf |