TALLARICO, ANDREA NATALE

TALLARICO, ANDREA NATALE  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Ricercatori a tempo determinato  

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Risultati 1 - 20 di 40 (tempo di esecuzione: 0.09 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N....; Bakeroot B. 2024-01-01 - Springer Science and Business Media Deutschland GmbH 4.01 Contributo in Atti di convegno -
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. 2023-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista In-Circuit_Assessment_of_the_Long-Term_Reliability_of_E-Mode_GaN_HEMTs.pdf
Role of interface/border traps on the threshold voltage instability of SiC power transistors Volosov V.; Cascino S.; Saggio M.; Imbruglia A.; Di Giovanni F.; Fiegna C.; Sangiorgi E.; Tallari...co A.N. 2023-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista post_print_INFOS_SSE.pdf
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C....; Tallarico A.N. 2023-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf
SiC MOSFETs performance modeling in Simulink Simscape environment Ferretti, Jacopo; Schiapparelli, Giacomo-Piero; Sangiorgi, Enrico; Tallarico, Andrea Natale 2023-01-01 - IEEE 4.01 Contributo in Atti di convegno -
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. 2022-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. 2022-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fie...gna C. 2022-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Post_print_version.pdf
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. 2022-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_of_p-GaN_HEMTs.pdfThe_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_postprint.pdf
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. 2021-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Final_Manuscript_merged.pdf
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N. 2021-01-01 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - 1.01 Articolo in rivista Post_print_version.pdf
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation Magnone, P.; Tallarico, A.N.; Pistollato, S.; Depetro, R.; Croce, G. 2021-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista Post_print_merged.pdf
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C. 2020-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno 09129112.pdfpost-print.pdf
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. 2020-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista role of the AlGaN post print.pdf
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rosse...tti M.; Croce G. 2020-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista TCAD simulation POST PRINT.pdf
An integrated DC/DC converter with online monitoring of hot-carrier degradation Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A. 2019-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno R2Power300_icecs2019_maybefinal shortref.pdf
Characterization and Modeling of BTI in SiC MOSFETs Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Con...sentino G.; Crupi F. 2019-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno 08901761 (1).pdfcombinepdfESSDERC2019.pdf
Gate Reliability of p-GaN HEMT with Gate Metal Retraction Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. 2019-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zhe...ng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A. 2019-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD predictions of hot-electron injection in p-type LDMOS transistors F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Mol...fese, S. Manzini, R. Depetro, G. Croce 2019-01-01 - - 4.01 Contributo in Atti di convegno -