TALLARICO, ANDREA NATALE

TALLARICO, ANDREA NATALE  

DIPARTIMENTO DI INGEGNERIA DELL'ENERGIA ELETTRICA E DELL'INFORMAZIONE "GUGLIELMO MARCONI"  

Ricercatori a tempo determinato  

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Risultati 1 - 20 di 35 (tempo di esecuzione: 0.031 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter Capasso G.; Zanuccoli M.; Tallarico A.N.; Fiegna C. 2022-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -
An integrated DC/DC converter with online monitoring of hot-carrier degradation Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A. 2019-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno R2Power300_icecs2019_maybefinal shortref.pdf
Characterization and Modeling of BTI in SiC MOSFETs Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Con...sentino G.; Crupi F. 2019-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno 08901761 (1).pdfcombinepdfESSDERC2019.pdf
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. ...N.; Fiegna, C. 2017-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; ...Tallarico, A. N.; Meneghesso, G.; Zanoni, E. 2017-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C. 2020-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno 09129112.pdfpost-print.pdf
Gate Reliability of p-GaN HEMT with Gate Metal Retraction Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C. 2019-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. 2022-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. 2021-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea ...Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio 2018-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Hot-Carrier Degradation in Power LDMOS_ Drain Bias Dependence and Lifetime Evaluation.pdfPost-print_Version.pdf
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Gius...eppe; Sangiorgi, Enrico; Fiegna, Claudio 2018-01-01 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY - 1.01 Articolo in rivista 08255610Tallarico2018.pdf
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N. 2021-01-01 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - 1.01 Articolo in rivista Post_print_version.pdf
Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions Tallarico A.N.; Cho M.; Franco J.; Ritzenthaler R.; Togo M.; Horiguchi N.; Groeseneken G.; Crupi F. 2014-01-01 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - 1.01 Articolo in rivista -
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio... Fiegna 2015-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; ...Fiegna, C. 2017-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista FINAL_MANUSCRIPT_MR.pdf
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs Tallarico, Andrea Natale; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; De...coutere, Stefaan; Fiegna, Claudio 2017-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista -
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode Andrea Natale Tallarico; Paolo Magnone; Enrico Sangiorgi; Claudio Fiegna 2014-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio... Fiegna 2015-01-01 - IEEE 4.01 Contributo in Atti di convegno -
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS) Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna 2014-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna 2014-01-01 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - 1.01 Articolo in rivista -