The paper proposes a model for Silicon-Carbide MOSFET, suitably defined to be simulated in the Simulink Simscape environment. The work details the model formalization, the tuning procedure based on the data available by the manufacturer’s datasheet, and the simulation procedure. The model takes into account the role of temperature and ageing on the transistor’s performance. Aging is implemented by drifting the drain-to-source ON-state resistance and/or the threshold voltage. The SiC MOSFET model is first validated on a commercial power module by comparing its outcomes with the manufacturer’s measurements. Then, it is adopted to simulate a full-bridge inverter, assessing the effects of transistors’ ageing on the current capability, limited by thermal effects, and on the efficiency degradation.

Ferretti, J., Schiapparelli, G., Sangiorgi, E., Tallarico, A.N. (2023). SiC MOSFETs performance modeling in Simulink Simscape environment. IEEE [10.1109/WiPDA58524.2023.10382195].

SiC MOSFETs performance modeling in Simulink Simscape environment

Ferretti, Jacopo
Primo
;
Sangiorgi, Enrico;Tallarico, Andrea Natale
Ultimo
2023

Abstract

The paper proposes a model for Silicon-Carbide MOSFET, suitably defined to be simulated in the Simulink Simscape environment. The work details the model formalization, the tuning procedure based on the data available by the manufacturer’s datasheet, and the simulation procedure. The model takes into account the role of temperature and ageing on the transistor’s performance. Aging is implemented by drifting the drain-to-source ON-state resistance and/or the threshold voltage. The SiC MOSFET model is first validated on a commercial power module by comparing its outcomes with the manufacturer’s measurements. Then, it is adopted to simulate a full-bridge inverter, assessing the effects of transistors’ ageing on the current capability, limited by thermal effects, and on the efficiency degradation.
2023
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
1
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Ferretti, J., Schiapparelli, G., Sangiorgi, E., Tallarico, A.N. (2023). SiC MOSFETs performance modeling in Simulink Simscape environment. IEEE [10.1109/WiPDA58524.2023.10382195].
Ferretti, Jacopo; Schiapparelli, Giacomo-Piero; Sangiorgi, Enrico; Tallarico, Andrea Natale
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/954932
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