The paper proposes a model for Silicon-Carbide MOSFET, suitably defined to be simulated in the Simulink Simscape environment. The work details the model formalization, the tuning procedure based on the data available by the manufacturer’s datasheet, and the simulation procedure. The model takes into account the role of temperature and ageing on the transistor’s performance. Aging is implemented by drifting the drain-to-source ON-state resistance and/or the threshold voltage. The SiC MOSFET model is first validated on a commercial power module by comparing its outcomes with the manufacturer’s measurements. Then, it is adopted to simulate a full-bridge inverter, assessing the effects of transistors’ ageing on the current capability, limited by thermal effects, and on the efficiency degradation.
Ferretti, J., Schiapparelli, G., Sangiorgi, E., Tallarico, A.N. (2023). SiC MOSFETs performance modeling in Simulink Simscape environment. IEEE [10.1109/WiPDA58524.2023.10382195].
SiC MOSFETs performance modeling in Simulink Simscape environment
Ferretti, Jacopo
Primo
;Sangiorgi, Enrico;Tallarico, Andrea NataleUltimo
2023
Abstract
The paper proposes a model for Silicon-Carbide MOSFET, suitably defined to be simulated in the Simulink Simscape environment. The work details the model formalization, the tuning procedure based on the data available by the manufacturer’s datasheet, and the simulation procedure. The model takes into account the role of temperature and ageing on the transistor’s performance. Aging is implemented by drifting the drain-to-source ON-state resistance and/or the threshold voltage. The SiC MOSFET model is first validated on a commercial power module by comparing its outcomes with the manufacturer’s measurements. Then, it is adopted to simulate a full-bridge inverter, assessing the effects of transistors’ ageing on the current capability, limited by thermal effects, and on the efficiency degradation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
