Degradation induced by hot-carrier stress is a crucial issue for the reliability of power LDMOS transistors. This is even more true for the p-channel LDMOS in which, unlike the n-channel counterpart, both the majority and minority carriers play a fundamental role on the device reliability. An in-depth study of the microscopic mechanisms induced by hot-carrier stress in new generation BCD integrated p-channel LDMOS is presented in this paper. The effect of the competing electron and hole trapping mechanisms on the on-resistance drift has been thoroughly analyzed. To this purpose, TCAD simulations including the deterministic solution of Boltzmann transport equation and the microscopic degradation mechanisms have been used, to the best of our knowledge, for the first time. The insight gained into the degradation sources and dynamics will provide a relevant basis for future device optimization.

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors

Tallarico A. N.
Primo
;
Reggiani S.
Secondo
;
Sangiorgi E.
Penultimo
;
Fiegna C.
Ultimo
2020

Abstract

Degradation induced by hot-carrier stress is a crucial issue for the reliability of power LDMOS transistors. This is even more true for the p-channel LDMOS in which, unlike the n-channel counterpart, both the majority and minority carriers play a fundamental role on the device reliability. An in-depth study of the microscopic mechanisms induced by hot-carrier stress in new generation BCD integrated p-channel LDMOS is presented in this paper. The effect of the competing electron and hole trapping mechanisms on the on-resistance drift has been thoroughly analyzed. To this purpose, TCAD simulations including the deterministic solution of Boltzmann transport equation and the microscopic degradation mechanisms have been used, to the best of our knowledge, for the first time. The insight gained into the degradation sources and dynamics will provide a relevant basis for future device optimization.
2020 IEEE International Reliability Physics Symposium Proceedings (IRPS)
1
5
Tallarico A.N.; Reggiani S.; Depetro R.; Croce G.; Sangiorgi E.; Fiegna C.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/785954
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