This article reports an in-depth analysis of the ON-resistance drift induced by storage/release mechanisms occurring in the buffer of GaN-on-Si power devices. The role of both stress condition (bias, temperature, and stress time) and buffer's epi-stack composition on the ON-resistance drift has been analyzed by means of back-gating current deep-level transient spectroscopy (I-DLTS). The results reveal two competing mechanisms: 1) a faster one related to acceptor defects and sensitive to the thickness of the carbon-doped GaN back-barrier (C:GaN) and superlattice (SL) layers and 2) a slower one ascribed to hole accumulation at the C:GaN/SL interface, independent of the thickness of the epi-stack. The temperature, stress bias, and stress time dependence of such mechanisms, often overlapping, have been investigated by adopting a genetic algorithm.
Millesimo M., Borga M., Valentini L., Bakeroot B., Posthuma N., Vohra A., et al. (2023). Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress. IEEE TRANSACTIONS ON ELECTRON DEVICES, 70(10), 5203-5209 [10.1109/TED.2023.3304272].
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress
Millesimo M.
Primo
;Valentini L.;Fiegna C.Penultimo
;Tallarico A. N.Ultimo
2023
Abstract
This article reports an in-depth analysis of the ON-resistance drift induced by storage/release mechanisms occurring in the buffer of GaN-on-Si power devices. The role of both stress condition (bias, temperature, and stress time) and buffer's epi-stack composition on the ON-resistance drift has been analyzed by means of back-gating current deep-level transient spectroscopy (I-DLTS). The results reveal two competing mechanisms: 1) a faster one related to acceptor defects and sensitive to the thickness of the carbon-doped GaN back-barrier (C:GaN) and superlattice (SL) layers and 2) a slower one ascribed to hole accumulation at the C:GaN/SL interface, independent of the thickness of the epi-stack. The temperature, stress bias, and stress time dependence of such mechanisms, often overlapping, have been investigated by adopting a genetic algorithm.File | Dimensione | Formato | |
---|---|---|---|
Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf
accesso aperto
Tipo:
Versione (PDF) editoriale
Licenza:
Creative commons
Dimensione
7.44 MB
Formato
Adobe PDF
|
7.44 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.