This article reports an in-depth analysis of the ON-resistance drift induced by storage/release mechanisms occurring in the buffer of GaN-on-Si power devices. The role of both stress condition (bias, temperature, and stress time) and buffer's epi-stack composition on the ON-resistance drift has been analyzed by means of back-gating current deep-level transient spectroscopy (I-DLTS). The results reveal two competing mechanisms: 1) a faster one related to acceptor defects and sensitive to the thickness of the carbon-doped GaN back-barrier (C:GaN) and superlattice (SL) layers and 2) a slower one ascribed to hole accumulation at the C:GaN/SL interface, independent of the thickness of the epi-stack. The temperature, stress bias, and stress time dependence of such mechanisms, often overlapping, have been investigated by adopting a genetic algorithm.

Millesimo M., Borga M., Valentini L., Bakeroot B., Posthuma N., Vohra A., et al. (2023). Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress. IEEE TRANSACTIONS ON ELECTRON DEVICES, 70(10), 5203-5209 [10.1109/TED.2023.3304272].

Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress

Millesimo M.
Primo
;
Valentini L.;Fiegna C.
Penultimo
;
Tallarico A. N.
Ultimo
2023

Abstract

This article reports an in-depth analysis of the ON-resistance drift induced by storage/release mechanisms occurring in the buffer of GaN-on-Si power devices. The role of both stress condition (bias, temperature, and stress time) and buffer's epi-stack composition on the ON-resistance drift has been analyzed by means of back-gating current deep-level transient spectroscopy (I-DLTS). The results reveal two competing mechanisms: 1) a faster one related to acceptor defects and sensitive to the thickness of the carbon-doped GaN back-barrier (C:GaN) and superlattice (SL) layers and 2) a slower one ascribed to hole accumulation at the C:GaN/SL interface, independent of the thickness of the epi-stack. The temperature, stress bias, and stress time dependence of such mechanisms, often overlapping, have been investigated by adopting a genetic algorithm.
2023
Millesimo M., Borga M., Valentini L., Bakeroot B., Posthuma N., Vohra A., et al. (2023). Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress. IEEE TRANSACTIONS ON ELECTRON DEVICES, 70(10), 5203-5209 [10.1109/TED.2023.3304272].
Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C.; Tallarico A.N.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/954865
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