MILLESIMO, MAURIZIO
MILLESIMO, MAURIZIO
ARCES - CENTRO DI RICERCA SUI SISTEMI ELETTRONICI PER L'INGEGNERIA DELL'INFORMAZIONE E DELLE TELECOMUNICAZIONI "ERCOLE DE CASTRO" - (ADVANCED RESEARCH CENTER ON ELECTRONIC SYSTEM)
Assegnisti
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
2024 Millesimo, M.; Fiegna, C.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Tallarico, A. N.
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current
2024 Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Posthuma, N.; Bakeroot, B.
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime
2024 Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangiorgi E.; Fiegna C.
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress
2023 Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C.; Tallarico A.N.
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
2022 Millesimo, M.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N.
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
2022 Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
2022 Millesimo, M.; Borga, M.; Bakeroot, B.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N.
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
2021 Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N.
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts
2021 Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate | Millesimo, M.; Fiegna, C.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; T...allarico, A. N. | 2024-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 2024037627 1_merged.pdf |
| GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current | Ercolano, F.; Tallarico, A. N.; Millesimo, M.; Gnani, E.; Reggiani, S.; Fiegna, C.; Borga, M.; Po...sthuma, N.; Bakeroot, B. | 2024-01-01 | - | Springer Science and Business Media Deutschland GmbH | 4.01 Contributo in Atti di convegno | SIE_2023_.pdf |
| P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime | Tallarico A.N.; Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Cosnier T.; Decoutere S.; Sangi...orgi E.; Fiegna C. | 2024-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | P-GaN_Gate_HEMTs_A_Solution_to_Improve_the_High-Temperature_Gate_Lifetime.pdf |
| Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress | Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C....; Tallarico A.N. | 2023-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf |
| Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition | Millesimo, M.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; T...allarico, A. N. | 2022-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | 2022010836_merged.pdf |
| TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs | Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fie...gna C. | 2022-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Post_print_version.pdf |
| The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs | Millesimo, M.; Borga, M.; Bakeroot, B.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; T...allarico, A. N. | 2022-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_postprint.pdf |
| High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs | Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Final_Manuscript_merged.pdf |
| Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts | Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N. | 2021-01-01 | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - | 1.01 Articolo in rivista | Post_print_version.pdf |