MILLESIMO, MAURIZIO

MILLESIMO, MAURIZIO  

CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"  

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Risultati 1 - 7 di 7 (tempo di esecuzione: 0.022 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current Ercolano F.; Tallarico A.N.; Millesimo M.; Gnani E.; Reggiani S.; Fiegna C.; Borga M.; Posthuma N....; Bakeroot B. 2024-01-01 - Springer Science and Business Media Deutschland GmbH 4.01 Contributo in Atti di convegno -
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress Millesimo M.; Borga M.; Valentini L.; Bakeroot B.; Posthuma N.; Vohra A.; Decoutere S.; Fiegna C....; Tallarico A.N. 2023-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Role_of_the_GaN-on-Si_Epi-Stack_on_RON_Caused_by_Back-Gating_Stress (1).pdf
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. 2022-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs Tallarico A.N.; Millesimo M.; Bakeroot B.; Borga M.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fie...gna C. 2022-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Post_print_version.pdf
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs Millesimo M.; Borga M.; Bakeroot B.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C.; Tallaric...o A.N. 2022-01-01 IEEE ELECTRON DEVICE LETTERS - 1.01 Articolo in rivista The_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_of_p-GaN_HEMTs.pdfThe_Role_of_Frequency_and_Duty_Cycle_on_the_Gate_Reliability_postprint.pdf
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs Millesimo M.; Fiegna C.; Posthuma N.; Borga M.; Bakeroot B.; Decoutere S.; Tallarico A.N. 2021-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista Final_Manuscript_merged.pdf
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts Millesimo M.; Posthuma N.; Bakeroot B.; Borga M.; Decoutere S.; Tallarico A.N. 2021-01-01 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - 1.01 Articolo in rivista Post_print_version.pdf