Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits. In particular, the adoption of devices with a different magnesium (Mg) concentration in the p-GaN layer, AlGaN barrier thickness and AlGaN aluminium percentage (Al%), allowed us to identify the degradation of the AlGaN barrier as responsible for time-dependent gate breakdown at room temperature. Lowering the Al% of the barrier and the Mg concentration of the p-GaN layer leads to a longer gate lifetime, while an optimum AlGaN barrier thickness is identified at given Al%.

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

Tallarico A. N.
Primo
;
Sangiorgi E.
Penultimo
;
Fiegna C.
Ultimo
2020

Abstract

Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits. In particular, the adoption of devices with a different magnesium (Mg) concentration in the p-GaN layer, AlGaN barrier thickness and AlGaN aluminium percentage (Al%), allowed us to identify the degradation of the AlGaN barrier as responsible for time-dependent gate breakdown at room temperature. Lowering the Al% of the barrier and the Mg concentration of the p-GaN layer leads to a longer gate lifetime, while an optimum AlGaN barrier thickness is identified at given Al%.
Tallarico A.N.; Posthuma N.E.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/785949
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 4
social impact