In this work we investigate and compare the electrostatics of fully-depleted cylindrical nanowire (CNW) FETs, rectangular nanowire (RNW) FETs, FinFETs and gate-all-around carbon-nanotube (GAA-CNT) FETs at extreme miniaturization limits. In doing so, we rigorously solve the coupled Schroedinger-Poisson equations within the device cross sections and fully account for quantum-mechanical effects. The investigation leads to the conclusion that, for an assigned threshold voltage, the gate-all-around CNT-FET offers superior properties due to the confinement of the gate-induced charge at the surface of the nanotube.
A. Marchi, E. Gnani, S. Reggiani, M. Rudan, G. Baccarani (2005). Investigating the performance limits of silicon nanowires and carbon nanotube FETs. BOLOGNA : s.n.
Investigating the performance limits of silicon nanowires and carbon nanotube FETs
MARCHI, ALEX;GNANI, ELENA;REGGIANI, SUSANNA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2005
Abstract
In this work we investigate and compare the electrostatics of fully-depleted cylindrical nanowire (CNW) FETs, rectangular nanowire (RNW) FETs, FinFETs and gate-all-around carbon-nanotube (GAA-CNT) FETs at extreme miniaturization limits. In doing so, we rigorously solve the coupled Schroedinger-Poisson equations within the device cross sections and fully account for quantum-mechanical effects. The investigation leads to the conclusion that, for an assigned threshold voltage, the gate-all-around CNT-FET offers superior properties due to the confinement of the gate-induced charge at the surface of the nanotube.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.