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EnglishIn this work we investigate and compare the electrostatics of fully-depleted cylindrical nanowire (CNW) FETs, rectangular nanowire (RNW) FETs, FinFETs and gate-all-around carbon-nanotube (GAA-CNT) FETs at extreme miniaturization limits. In doing so, we rigorously solve the coupled Schroedinger-Poisson equations within the device cross sections and fully account for quantum-mechanical effects. The investigation leads to the conclusion that, for an assigned threshold voltage, the gate-all-around CNT-FET offers superior properties due to the confinement of the gate-induced charge at the surface of the nanotube.
| Titolo: | Investigating the performance limits of silicon nanowires and carbon nanotube FETs | |
| Autore/i: | MARCHI, ALEX; GNANI, ELENA; REGGIANI, SUSANNA; RUDAN, MASSIMO; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2005 | |
| Titolo del libro: | ULIS 2005 | |
| Abstract: | In this work we investigate and compare the electrostatics of fully-depleted cylindrical nanowire (CNW) FETs, rectangular nanowire (RNW) FETs, FinFETs and gate-all-around carbon-nanotube (GAA-CNT) FETs at extreme miniaturization limits. In doing so, we rigorously solve the coupled Schroedinger-Poisson equations within the device cross sections and fully account for quantum-mechanical effects. The investigation leads to the conclusion that, for an assigned threshold voltage, the gate-all-around CNT-FET offers superior properties due to the confinement of the gate-induced charge at the surface of the nanotube. | |
| Data prodotto definitivo in UGOV: | 12-ott-2005 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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