In this work we investigate and compare the electrostatics of fully-depleted cylindrical nanowire (CNW) FETs, rectangular nanowire (RNW) FETs, FinFETs and gate-all-around carbon-nanotube (GAA-CNT) FETs at extreme miniaturization limits. In doing so, we rigorously solve the coupled Schroedinger-Poisson equations within the device cross sections and fully account for quantum-mechanical effects. The investigation leads to the conclusion that, for an assigned threshold voltage, the gate-all-around CNT-FET offers superior properties due to the confinement of the gate-induced charge at the surface of the nanotube.
Investigating the performance limits of silicon nanowires and carbon nanotube FETs / A. Marchi; E. Gnani; S. Reggiani; M. Rudan; G. Baccarani. - STAMPA. - (2005). (Intervento presentato al convegno 6th International Conference on Ultimate Integration of Silicon (ULIS 2005) tenutosi a Bologna nel 7-9 Aprile 2005).
Investigating the performance limits of silicon nanowires and carbon nanotube FETs
MARCHI, ALEX;GNANI, ELENA;REGGIANI, SUSANNA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2005
Abstract
In this work we investigate and compare the electrostatics of fully-depleted cylindrical nanowire (CNW) FETs, rectangular nanowire (RNW) FETs, FinFETs and gate-all-around carbon-nanotube (GAA-CNT) FETs at extreme miniaturization limits. In doing so, we rigorously solve the coupled Schroedinger-Poisson equations within the device cross sections and fully account for quantum-mechanical effects. The investigation leads to the conclusion that, for an assigned threshold voltage, the gate-all-around CNT-FET offers superior properties due to the confinement of the gate-induced charge at the surface of the nanotube.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
