Different AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative explanation of the dependence on frequency and duty cycle has been obtained using the new approach based on physical models. An extended analysis of the HCS degradation in a real switching application through a resistive load has been reported to gain an insight on the role played by the peak-HCS rates during the rising/falling edges.
Titolo: | TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions |
Autore/i: | MONTI, FEDERICO; REGGIANI, SUSANNA; Barone, G.; GNANI, ELENA; GNUDI, ANTONIO; BACCARANI, GIORGIO; Poli, S.; Chuang, M. Y.; Tian, W.; Varghese, D.; Wise, R. |
Autore/i Unibo: | |
Anno: | 2014 |
Titolo del libro: | Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014) |
Pagina iniziale: | 333 |
Pagina finale: | 336 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ESSDERC.2014.6948828 |
Abstract: | Different AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative explanation of the dependence on frequency and duty cycle has been obtained using the new approach based on physical models. An extended analysis of the HCS degradation in a real switching application through a resistive load has been reported to gain an insight on the role played by the peak-HCS rates during the rising/falling edges. |
Data stato definitivo: | 13-nov-2015 |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |