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EnglishDifferent AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative explanation of the dependence on frequency and duty cycle has been obtained using the new approach based on physical models. An extended analysis of the HCS degradation in a real switching application through a resistive load has been reported to gain an insight on the role played by the peak-HCS rates during the rising/falling edges.
| Titolo: | TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions |
| Autore/i: | MONTI, FEDERICO; REGGIANI, SUSANNA; Barone, G.; GNANI, ELENA; GNUDI, ANTONIO; BACCARANI, GIORGIO; Poli, S.; Chuang, M. Y.; Tian, W.; Varghese, D.; Wise, R. |
| Autore/i Unibo: | |
| Anno: | 2014 |
| Titolo del libro: | Proceedings of the 2014 44th European Solid State Device Research Conference (ESSDERC 2014) |
| Pagina iniziale: | 333 |
| Pagina finale: | 336 |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ESSDERC.2014.6948828 |
| Abstract: | Different AC pulsed stress signals have been applied to an n-type LDMOS with shallow-trench isolation (STI). The HCS degradation curves have been measured on wafer by varying frequency and duty-cycle under a high-VDS stress for both low and high Vgs biases. The linear drain current drifts have been also investigated through TCAD predictions under AC stress conditions for the first time. A quantitative explanation of the dependence on frequency and duty cycle has been obtained using the new approach based on physical models. An extended analysis of the HCS degradation in a real switching application through a resistive load has been reported to gain an insight on the role played by the peak-HCS rates during the rising/falling edges. |
| Data stato definitivo: | 13-nov-2015 |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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http://hdl.handle.net/11585/463577
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