The impact-ionization coefficient at high fields is derived in terms of the electric field E and lattice temperature TL, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of the impact-ionization coefficient. The role of the relaxation times in determining the slope is discussed, along with the meaning of the critical field.
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach / M. Rudan; R. Katilius; S. Reggiani; E. Gnani; G. Baccarani. - STAMPA. - (2007), pp. 1-2. (Intervento presentato al convegno 12th International Workshop on Computational Electronics (IWCE-12) tenutosi a Amherst, USA nel 8-10 October, 2007).
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach
RUDAN, MASSIMO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2007
Abstract
The impact-ionization coefficient at high fields is derived in terms of the electric field E and lattice temperature TL, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of the impact-ionization coefficient. The role of the relaxation times in determining the slope is discussed, along with the meaning of the critical field.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
