The impact-ionization coefficient at high fields is derived in terms of the electric field E and lattice temperature TL, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of the impact-ionization coefficient. The role of the relaxation times in determining the slope is discussed, along with the meaning of the critical field.
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach
RUDAN, MASSIMO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2007
Abstract
The impact-ionization coefficient at high fields is derived in terms of the electric field E and lattice temperature TL, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of the impact-ionization coefficient. The role of the relaxation times in determining the slope is discussed, along with the meaning of the critical field.File in questo prodotto:
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