The impact-ionization coefficient at high fields is derived in terms of the electric field E and lattice temperature TL, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of the impact-ionization coefficient. The role of the relaxation times in determining the slope is discussed, along with the meaning of the critical field.
M. Rudan, R. Katilius, S. Reggiani, E. Gnani, G. Baccarani (2007). Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach. s.l : s.n.
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach
RUDAN, MASSIMO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2007
Abstract
The impact-ionization coefficient at high fields is derived in terms of the electric field E and lattice temperature TL, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of the impact-ionization coefficient. The role of the relaxation times in determining the slope is discussed, along with the meaning of the critical field.File in questo prodotto:
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