A simulation study of the graphene base transistor is presented based on the most recent experimental results involving a novel double-layer emitter-to-base insulator made of TmSiO and TiO2. The simulations are based on a 1-D quantum transport model with the effective mass approximation, and reproduce well the experiments both in terms of current levels and common-base current gain α. Performance projections are then investigated: with transparent graphene, the cutoff frequency is predicted to increase from 1MHz to 100MHz by reducing the thickness of TmSiO from 1 nm to 0.5 nm. In order to go beyond this limit towards the THz range, a material with a lower barrier height than TmSiO should be considered. A technological breakthrough boosting the graphene interface quality is also needed in order to obtain acceptable values of α, which are still low.

Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection

DI LECCE, VALERIO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2016

Abstract

A simulation study of the graphene base transistor is presented based on the most recent experimental results involving a novel double-layer emitter-to-base insulator made of TmSiO and TiO2. The simulations are based on a 1-D quantum transport model with the effective mass approximation, and reproduce well the experiments both in terms of current levels and common-base current gain α. Performance projections are then investigated: with transparent graphene, the cutoff frequency is predicted to increase from 1MHz to 100MHz by reducing the thickness of TmSiO from 1 nm to 0.5 nm. In order to go beyond this limit towards the THz range, a material with a lower barrier height than TmSiO should be considered. A technological breakthrough boosting the graphene interface quality is also needed in order to obtain acceptable values of α, which are still low.
2016
Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/588886
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact