DI LECCE, VALERIO
DI LECCE, VALERIO
CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback
2014 R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani
DC and small-signal numerical simulation of graphene base transistor for terahertz operation
2013 DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
Going ballistic: Graphene hot electron transistors
2015 Vaziri, S.; Smith, A.D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M.C
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics
2015 Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation
2013 Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation
2013 Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani
Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges
2015 Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation
2014 Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani
Semianalytical quantum model for graphene field-effect transistors
2014 Pugnaghi, Claudio; Grassi, Roberto; Gnudi, Antonio; Di Lecce, Valerio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection
2016 Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
Simulations of Graphene Base Transistors with Improved Graphene Interface Model
2015 Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback | R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani | 2014-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| DC and small-signal numerical simulation of graphene base transistor for terahertz operation | DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio | 2013-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Going ballistic: Graphene hot electron transistors | Vaziri, S.; Smith, A.D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, ...F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M.C | 2015-01-01 | SOLID STATE COMMUNICATIONS | - | 1.01 Articolo in rivista | PP Going ballistic.pdf |
| Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics | Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio | 2015-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation | Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani | 2013-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation | Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani | 2013-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges | Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio | 2015-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation | Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Bac...carani | 2014-01-01 | - | Bez, R; Pavan, P; Meneghesso, G; | 4.01 Contributo in Atti di convegno | - |
| Semianalytical quantum model for graphene field-effect transistors | Pugnaghi, Claudio; Grassi, Roberto; Gnudi, Antonio; Di Lecce, Valerio; Gnani, Elena; Reggiani, Su...sanna; Baccarani, Giorgio | 2014-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection | Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio | 2016-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| Simulations of Graphene Base Transistors with Improved Graphene Interface Model | Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio | 2015-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |