We compare through numerical simulations a Si GBHT and a SiGe HBT: the fT limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the fT limit drops by about two orders of magnitude.
Di Lecce, V., Gnudi, A., Gnani, E., Reggiani, S., Baccarani, G. (2015). Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges [10.1109/DRC.2015.7175570].
Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges
DI LECCE, VALERIO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015
Abstract
We compare through numerical simulations a Si GBHT and a SiGe HBT: the fT limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the fT limit drops by about two orders of magnitude.File in questo prodotto:
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