A simulation study of the graphene base heterojunction transistor (GBHT) is presented based on a novel realistic graphene-Si interface model, calibrated on the experimental graphene-Si Schottky diodes, whose current-voltageerature characteristics are well reproduced. The GBHT simulations predict f<inf>T</inf> in the tens-of-gigahertz range and confirm the need for an improved quality of the graphene interface for the terahertz operation to be reached.
Di Lecce, V., Gnudi, A., Gnani, E., Reggiani, S., Baccarani, G. (2015). Simulations of Graphene Base Transistors with Improved Graphene Interface Model. IEEE ELECTRON DEVICE LETTERS, 36(9), 969-971 [10.1109/LED.2015.2452214].
Simulations of Graphene Base Transistors with Improved Graphene Interface Model
DI LECCE, VALERIO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015
Abstract
A simulation study of the graphene base heterojunction transistor (GBHT) is presented based on a novel realistic graphene-Si interface model, calibrated on the experimental graphene-Si Schottky diodes, whose current-voltageerature characteristics are well reproduced. The GBHT simulations predict fI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
