The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.

DI LECCE, V., Grassi, R., Gnudi, A., Gnani, E., Reggiani, S., Baccarani, G. (2014). Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. Bez, R; Pavan, P; Meneghesso, G; [10.1109/ESSDERC.2014.6948823].

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

DI LECCE, VALERIO;GRASSI, ROBERTO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2014

Abstract

The influence of the crystal orientation on the performance of silicon-based Graphene-Base Heterojunction Transistors (GBHTs) for terahertz operation is investigated by means of an in-house developed simulator based on quantum transport coupled with Poisson equation. The effect of impurity scattering is included, finding that terahertz operation is possible even considering the reduction of the mobility due to dopants.
2014
2014 44th European Solid State Device Research Conference (ESSDERC)
313
316
DI LECCE, V., Grassi, R., Gnudi, A., Gnani, E., Reggiani, S., Baccarani, G. (2014). Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. Bez, R; Pavan, P; Meneghesso, G; [10.1109/ESSDERC.2014.6948823].
DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/463581
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