The working principles of the hot-electron graphene base transistor (GBT) for analog terahertz operation have been investigated by means of a self-consistent Schrodinger-Polsson solver code. Its regions of operation are defined and discussed. With the help of a small-signal model, it is shown that the cutoff frequency does not depend on the quantum capacitance of the graphene layer, which on the contrary severely affects the intrinsic voltage gain, and that terahertz operation is possible.
DC and small-signal numerical simulation of graphene base transistor for terahertz operation / DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio. - ELETTRONICO. - (2013), pp. 314-317. (Intervento presentato al convegno European Solid-State Device Research Conference (ESSDERC) tenutosi a Bucharest nel 16-20 Sept. 2013) [10.1109/ESSDERC.2013.6818881].
DC and small-signal numerical simulation of graphene base transistor for terahertz operation
DI LECCE, VALERIO;GRASSI, ROBERTO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2013
Abstract
The working principles of the hot-electron graphene base transistor (GBT) for analog terahertz operation have been investigated by means of a self-consistent Schrodinger-Polsson solver code. Its regions of operation are defined and discussed. With the help of a small-signal model, it is shown that the cutoff frequency does not depend on the quantum capacitance of the graphene layer, which on the contrary severely affects the intrinsic voltage gain, and that terahertz operation is possible.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
