Recent papers on advanced semiconductor devices adopt a model called "density-gradient correction", in which the standard electric potential acting on the carriers is modified by a non-linear term involving the carrier concentration and its second derivatives. When applied to cases where quantum effects are non negligible, the modified model improves the results with respect to the standard approach. The paper shows how, starting from a straighforward derivation of the density-gradient correction from the Schroedinger equation, its interpretation as an addition to the potential energy is questionable, and makes a few considerations for further investigation on the subject.

The density-gradient correction as a disguised pilot wave of de Broglie / M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI. - STAMPA. - (2004), pp. 13-16. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004) tenutosi a Munich nel 2-4 Settembre 2004).

The density-gradient correction as a disguised pilot wave of de Broglie

RUDAN, MASSIMO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2004

Abstract

Recent papers on advanced semiconductor devices adopt a model called "density-gradient correction", in which the standard electric potential acting on the carriers is modified by a non-linear term involving the carrier concentration and its second derivatives. When applied to cases where quantum effects are non negligible, the modified model improves the results with respect to the standard approach. The paper shows how, starting from a straighforward derivation of the density-gradient correction from the Schroedinger equation, its interpretation as an addition to the potential energy is questionable, and makes a few considerations for further investigation on the subject.
2004
Simulation of Semiconductor Processes and Devices (SISPAD 2004)
13
16
The density-gradient correction as a disguised pilot wave of de Broglie / M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI. - STAMPA. - (2004), pp. 13-16. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004) tenutosi a Munich nel 2-4 Settembre 2004).
M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/3539
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