This paper investigates feasible inverter configurations based on co-optimized n- and p-type tunnel field-effect transistors (TFETs) integrated on the same InAs/Al0.05Ga0.95Sb platform. Based on 3-D full-quantum simulations, the considered devices feature steep subthreshold slopes and relatively high on- currents and are combined into two inverter designs. Benchmarking against aggressively scaled CMOS logic based on multigate architectures highlights potential of the proposed TFET implementations to perform up to 10 × and 100× faster in low operating power and low standby power environments, respectively. The comparison is conducted at low supply voltages (VDD =0.25 V) and for equal levels of static power consumption. The proposed TFET-based platform is thus expected to be a good candidate for low-voltage/low-power applications in near-future technology generations.

Emanuele, B., Elena, G., Antonio, G., Susanna, R., Giorgio, B. (2014). TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61, 473-478 [10.1109/TED.2013.2294792].

TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

BARAVELLI, EMANUELE;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2014

Abstract

This paper investigates feasible inverter configurations based on co-optimized n- and p-type tunnel field-effect transistors (TFETs) integrated on the same InAs/Al0.05Ga0.95Sb platform. Based on 3-D full-quantum simulations, the considered devices feature steep subthreshold slopes and relatively high on- currents and are combined into two inverter designs. Benchmarking against aggressively scaled CMOS logic based on multigate architectures highlights potential of the proposed TFET implementations to perform up to 10 × and 100× faster in low operating power and low standby power environments, respectively. The comparison is conducted at low supply voltages (VDD =0.25 V) and for equal levels of static power consumption. The proposed TFET-based platform is thus expected to be a good candidate for low-voltage/low-power applications in near-future technology generations.
2014
Emanuele, B., Elena, G., Antonio, G., Susanna, R., Giorgio, B. (2014). TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 61, 473-478 [10.1109/TED.2013.2294792].
Emanuele, Baravelli; Elena, Gnani; Antonio, Gnudi; Susanna, Reggiani; Giorgio, Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/463572
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