TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

This paper investigates feasible inverter configurations based on co-optimized n- and p-type tunnel field-effect transistors (TFETs) integrated on the same InAs/Al0.05Ga0.95Sb platform. Based on 3-D full-quantum simulations, the considered devices feature steep subthreshold slopes and relatively high on- currents and are combined into two inverter designs. Benchmarking against aggressively scaled CMOS logic based on multigate architectures highlights potential of the proposed TFET implementations to perform up to 10 × and 100× faster in low operating power and low standby power environments, respectively. The comparison is conducted at low supply voltages (VDD =0.25 V) and for equal levels of static power consumption. The proposed TFET-based platform is thus expected to be a good candidate for low-voltage/low-power applications in near-future technology generations.