In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.
Theoretical analyses and modeling for nanoelectronics / Baccarani, G.; Baravelli, E.; Gnani, E.; Gnudi, A.; Reggiani, S.. - ELETTRONICO. - 2015-:(2015), pp. 7313815.4-7313815.9. (Intervento presentato al convegno 41st European Solid-State Circuits Conference, ESSCIRC 2015 tenutosi a Messe Congress, aut nel 2015) [10.1109/ESSCIRC.2015.7313815].
Theoretical analyses and modeling for nanoelectronics
BACCARANI, GIORGIO;BARAVELLI, EMANUELE;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA
2015
Abstract
In this presentation we shortly discuss the evolution of Microelectronics into Nanoelectronics, according to the predictions of Moore's law, and some of the issues related with this evolution. Next, we address the requirements of device modeling related with an extreme device miniaturization, such as the band splitting into multiple subbands and quasi-ballistic transport. Physical models are summarized and a few simulation results of heterojunction TFETs are reported and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
