Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.
Titolo: | Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains |
Autore/i: | GRASSI, ROBERTO; GNUDI, ANTONIO; Valerio Di, Lecce; GNANI, ELENA; REGGIANI, SUSANNA; BACCARANI, GIORGIO |
Autore/i Unibo: | |
Anno: | 2014 |
Rivista: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TED.2013.2294113 |
Abstract: | Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization. |
Data stato definitivo: | 2015-11-30T11:23:23Z |
Appare nelle tipologie: | 1.01 Articolo in rivista |
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