Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains / Roberto, Grassi; Antonio, Gnudi; Valerio Di, Lecce; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 61:(2014), pp. 617-624. [10.1109/TED.2013.2294113]
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains
GRASSI, ROBERTO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2014
Abstract
Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene field-effect transistors in the bias region of negative output differential resistance. We show that, compared with the region of quasi-saturation, a voltage gain larger than 10 can be obtained, at the cost of a decrease in the maximum oscillation frequency of about a factor of 1.5-3 and the need for a careful circuit stabilization.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.