Some key aspects of the behavior of graphene nanoribbon (GNR) FETs for high-frequency analog applications are identified and discussed by means of a simulation study based on a full-quantum ballistic transport model. GNRs of width in the order of 10 nm are considered, where the small band-gap and the consequent leakage currents due to band-to-band-tunneling (BTBT) require a careful design. Simulations performed with a realistic model for source/drain metal contacts indicate that a proper choice of the drain doping profile can partially suppress BTBT currents. A 40-nm gate-length 2-nm SiO2 gate-dielectric GNR-FET can achieve a peak small-signal voltage gain of about 30 and a cut-off frequency well above 1 THz.
I. Imperiale, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani (2011). High-frequency analog GNR-FET design criteria. Piscataway : IEEE Publishing Services [10.1109/ESSDERC.2011.6044174].
High-frequency analog GNR-FET design criteria
IMPERIALE, ILARIA;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2011
Abstract
Some key aspects of the behavior of graphene nanoribbon (GNR) FETs for high-frequency analog applications are identified and discussed by means of a simulation study based on a full-quantum ballistic transport model. GNRs of width in the order of 10 nm are considered, where the small band-gap and the consequent leakage currents due to band-to-band-tunneling (BTBT) require a careful design. Simulations performed with a realistic model for source/drain metal contacts indicate that a proper choice of the drain doping profile can partially suppress BTBT currents. A 40-nm gate-length 2-nm SiO2 gate-dielectric GNR-FET can achieve a peak small-signal voltage gain of about 30 and a cut-off frequency well above 1 THz.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
