A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in the temperature range between 300 and773 K. The impact-ionization model proposed here amply extends the range of simulation tools up to nearly 800 K, which is especially important in order to predict the failure threshold of ESD-protection and power devices.
S. REGGIANI, M. RUDAN, E. GNANI, BACCARANI G., C. CORVASCE, D. BARLINI, et al. (2004). Experimental extraction of the electron impact-ionization coefficient at large operating temperatures. SAN FRANCISCO : IEEE-EDS.
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures
REGGIANI, SUSANNA;RUDAN, MASSIMO;GNANI, ELENA;BACCARANI, GIORGIO;
2004
Abstract
A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in the temperature range between 300 and773 K. The impact-ionization model proposed here amply extends the range of simulation tools up to nearly 800 K, which is especially important in order to predict the failure threshold of ESD-protection and power devices.File in questo prodotto:
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