A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in the temperature range between 300 and773 K. The impact-ionization model proposed here amply extends the range of simulation tools up to nearly 800 K, which is especially important in order to predict the failure threshold of ESD-protection and power devices.

Experimental extraction of the electron impact-ionization coefficient at large operating temperatures

REGGIANI, SUSANNA;RUDAN, MASSIMO;GNANI, ELENA;BACCARANI, GIORGIO;
2004

Abstract

A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in the temperature range between 300 and773 K. The impact-ionization model proposed here amply extends the range of simulation tools up to nearly 800 K, which is especially important in order to predict the failure threshold of ESD-protection and power devices.
2004
Technical Digest of the IEEE International Electron Device Meeting 2004
407
410
S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/3543
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