In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient.
Titolo: | TCAD modeling of charge transport in HV-IC encapsulation materials |
Autore/i: | IMPERIALE, ILARIA; REGGIANI, SUSANNA; GNANI, ELENA; GNUDI, ANTONIO; BACCARANI, GIORGIO; Nguyen, L.; Denison, M. |
Autore/i Unibo: | |
Anno: | 2014 |
Titolo del libro: | 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
Pagina iniziale: | 450 |
Pagina finale: | 453 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ISPSD.2014.6856073 |
Abstract: | In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient. |
Data stato definitivo: | 30-nov-2015 |
Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |