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EnglishIn high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient.
| Titolo: | TCAD modeling of charge transport in HV-IC encapsulation materials |
| Autore/i: | IMPERIALE, ILARIA; REGGIANI, SUSANNA; GNANI, ELENA; GNUDI, ANTONIO; BACCARANI, GIORGIO; Nguyen, L.; Denison, M. |
| Autore/i Unibo: | |
| Anno: | 2014 |
| Titolo del libro: | 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) |
| Pagina iniziale: | 450 |
| Pagina finale: | 453 |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ISPSD.2014.6856073 |
| Abstract: | In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient. |
| Data stato definitivo: | 30-nov-2015 |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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http://hdl.handle.net/11585/463574
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