In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient.
TCAD modeling of charge transport in HV-IC encapsulation materials / Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.. - STAMPA. - (2014), pp. 450-453. (Intervento presentato al convegno 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) tenutosi a Waikoloa, Hawaii (USA) nel June 15-19, 2014) [10.1109/ISPSD.2014.6856073].
TCAD modeling of charge transport in HV-IC encapsulation materials
IMPERIALE, ILARIA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO;
2014
Abstract
In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.