In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient.

TCAD modeling of charge transport in HV-IC encapsulation materials / Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.. - STAMPA. - (2014), pp. 450-453. (Intervento presentato al convegno 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) tenutosi a Waikoloa, Hawaii (USA) nel June 15-19, 2014) [10.1109/ISPSD.2014.6856073].

TCAD modeling of charge transport in HV-IC encapsulation materials

IMPERIALE, ILARIA;REGGIANI, SUSANNA;GNANI, ELENA;GNUDI, ANTONIO;BACCARANI, GIORGIO;
2014

Abstract

In high-voltage integrated circuits (HV-ICs) operating at high temperatures, the high electric field spreading out from the high-voltage bond-pad can induce charge transport phenomena in the encapsulation material. A new TCAD-based approach is proposed which is suitable for investigating the role played by the propagation of charge within the plastic mold over the surface of high-voltage circuits. Simulations are compared with experimental data carried out using a dedicated test chip. The proposed approach is able to predict the features of the leakage current curves measured on different sensors during a complete charging transient.
2014
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
450
453
TCAD modeling of charge transport in HV-IC encapsulation materials / Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.. - STAMPA. - (2014), pp. 450-453. (Intervento presentato al convegno 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) tenutosi a Waikoloa, Hawaii (USA) nel June 15-19, 2014) [10.1109/ISPSD.2014.6856073].
Imperiale, I.; Reggiani, S.; Gnani, E.; Gnudi, A.; Baccarani, G.; Nguyen, L.; Denison, M.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/463574
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 5
social impact