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EnglishAn analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.
| Titolo: | Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs | |
| Autore/i: | GNUDI, ANTONIO; REGGIANI, SUSANNA; GNANI, ELENA; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2012 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/LED.2011.2181153 | |
| Abstract: | An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions. | |
| Data prodotto definitivo in UGOV: | 2013-06-26 17:59:25 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/11585/121116
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