An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs
GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2012
Abstract
An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.File in questo prodotto:
Eventuali allegati, non sono esposti
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.