An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.

Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs

GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2012

Abstract

An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.
A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/121116
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