An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs / A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 33:3(2012), pp. 336-338. [10.1109/LED.2011.2181153]
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs
GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2012
Abstract
An analytical formulation of the threshold voltage variance induced by random dopant fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar double-gate structures under uniform channel and constant mobility approximation. Results from drift-diffusion-based numerical methods are in reasonable agreement also for large Vds, including mobility variations, and for short gate lengths. The results clearly indicate that the threshold voltage fluctuations can become a concern with the reduction of the critical dimensions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
