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EnglishIn this paper we investigate the effect of surface roughness scattering on transport in silicon nanowire FETs using a deterministic Boltzmann equation solver previously developed by the authors. We first solve the coupled Schroedinger-Poisson equations to extract the subband profiles along the channel, and then address the transport problem. Some features of the low-fied mobility as a function of the wire diameter and gate bias are discussed and the effect of surface roughness on the I-V characteristics is presented.
| Titolo: | Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness | |
| Autore/i: | M. Lenzi; GNUDI, ANTONIO; REGGIANI, SUSANNA; GNANI, ELENA; RUDAN, MASSIMO; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2008 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1007/s10825-008-0245-z | |
| Abstract: | In this paper we investigate the effect of surface roughness scattering on transport in silicon nanowire FETs using a deterministic Boltzmann equation solver previously developed by the authors. We first solve the coupled Schroedinger-Poisson equations to extract the subband profiles along the channel, and then address the transport problem. Some features of the low-fied mobility as a function of the wire diameter and gate bias are discussed and the effect of surface roughness on the I-V characteristics is presented. | |
| Data prodotto definitivo in UGOV: | 2008-10-09 17:53:14 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/11585/62383
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