In this paper we investigate the effect of surface roughness scattering on transport in silicon nanowire FETs using a deterministic Boltzmann equation solver previously developed by the authors. We first solve the coupled Schroedinger-Poisson equations to extract the subband profiles along the channel, and then address the transport problem. Some features of the low-fied mobility as a function of the wire diameter and gate bias are discussed and the effect of surface roughness on the I-V characteristics is presented.
M. Lenzi, A. Gnudi, S. Reggiani, E. Gnani, M. Rudan, G. Baccarani (2008). Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness. JOURNAL OF COMPUTATIONAL ELECTRONICS, 7, 355-358 [10.1007/s10825-008-0245-z].
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness
GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2008
Abstract
In this paper we investigate the effect of surface roughness scattering on transport in silicon nanowire FETs using a deterministic Boltzmann equation solver previously developed by the authors. We first solve the coupled Schroedinger-Poisson equations to extract the subband profiles along the channel, and then address the transport problem. Some features of the low-fied mobility as a function of the wire diameter and gate bias are discussed and the effect of surface roughness on the I-V characteristics is presented.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
