In this paper we investigate the effect of surface roughness scattering on transport in silicon nanowire FETs using a deterministic Boltzmann equation solver previously developed by the authors. We first solve the coupled Schroedinger-Poisson equations to extract the subband profiles along the channel, and then address the transport problem. Some features of the low-fied mobility as a function of the wire diameter and gate bias are discussed and the effect of surface roughness on the I-V characteristics is presented.

Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness

GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;RUDAN, MASSIMO;BACCARANI, GIORGIO
2008

Abstract

In this paper we investigate the effect of surface roughness scattering on transport in silicon nanowire FETs using a deterministic Boltzmann equation solver previously developed by the authors. We first solve the coupled Schroedinger-Poisson equations to extract the subband profiles along the channel, and then address the transport problem. Some features of the low-fied mobility as a function of the wire diameter and gate bias are discussed and the effect of surface roughness on the I-V characteristics is presented.
M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/62383
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