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EnglishIn this work we investigate the performance of double-gate and cylindrical nanowire FETs with high- gate dielectrics at their extreme miniaturization limits. The model fully accounts for quantum electrostatics; current transport is simulated by an improved quantum drift-diffusion approach supported by a new thickness-dependent mobility model which nicely fits the available measurements for both SiO2 and HfO2 gate dielectrics. The on-current is simulated using both the quantum drift-diffusion model and a full-quantum transport approach based on the quantum transmitting boundary method, which assumes a purely ballistic transport. The performance comparison between SiO2 and HfO2 insulated-gate FETs with the same electrical oxide thickness demonstrates that the latter provides a slight degradation of the short-channel effect compared with the former but, at the same time, gives an improved on-current due to lateral capacitive-coupling effects, despite the inherent degradation of the low-field mobility.
| Titolo: | Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes | |
| Autore/i: | GNANI, ELENA; REGGIANI, SUSANNA; RUDAN, MASSIMO; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2007 | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TNANO.2006.888547 | |
| Abstract: | In this work we investigate the performance of double-gate and cylindrical nanowire FETs with high- gate dielectrics at their extreme miniaturization limits. The model fully accounts for quantum electrostatics; current transport is simulated by an improved quantum drift-diffusion approach supported by a new thickness-dependent mobility model which nicely fits the available measurements for both SiO2 and HfO2 gate dielectrics. The on-current is simulated using both the quantum drift-diffusion model and a full-quantum transport approach based on the quantum transmitting boundary method, which assumes a purely ballistic transport. The performance comparison between SiO2 and HfO2 insulated-gate FETs with the same electrical oxide thickness demonstrates that the latter provides a slight degradation of the short-channel effect compared with the former but, at the same time, gives an improved on-current due to lateral capacitive-coupling effects, despite the inherent degradation of the low-field mobility. | |
| Data prodotto definitivo in UGOV: | 2007-12-06 18:15:58 | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11585/51244
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