The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.

Computational study of graphene nanoribbon FETs for RF applications

IMPERIALE, ILARIA;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2010

Abstract

The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.
IEDM Technical Digest
732
735
I. Imperiale; S. Bonsignore; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/96164
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