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EnglishThe high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.
| Titolo: | Computational study of graphene nanoribbon FETs for RF applications | |
| Autore/i: | IMPERIALE, ILARIA; S. Bonsignore; GNUDI, ANTONIO; GNANI, ELENA; REGGIANI, SUSANNA; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2010 | |
| Titolo del libro: | IEDM Technical Digest | |
| Pagina iniziale: | 732 | |
| Pagina finale: | 735 | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/IEDM.2010.5703463 | |
| Abstract: | The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested. | |
| Data prodotto definitivo in UGOV: | 25-gen-2011 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
File in questo prodotto:
http://hdl.handle.net/11585/96164
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