The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.
Computational study of graphene nanoribbon FETs for RF applications / I. Imperiale; S. Bonsignore; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani. - STAMPA. - (2010), pp. 732-735. (Intervento presentato al convegno International Electron Device Meeting 2010 tenutosi a San Francisco, CA nel Dec. 6-8, 2010) [10.1109/IEDM.2010.5703463].
Computational study of graphene nanoribbon FETs for RF applications
IMPERIALE, ILARIA;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2010
Abstract
The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
