The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.
I. Imperiale, S. Bonsignore, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani (2010). Computational study of graphene nanoribbon FETs for RF applications. SAN FRANCISCO, CA : s.n [10.1109/IEDM.2010.5703463].
Computational study of graphene nanoribbon FETs for RF applications
IMPERIALE, ILARIA;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2010
Abstract
The high-frequency analog performance of 10-15 nm-wide GNR-FETs is investigated by means of simulations based on a full-quantum atomistic model. Ideal edges and acoustic phonons are considered. Cut-off frequencies in the order of several THz are predicted. Limitations in the maximum voltage-gain (≈ 10), due to the absence of a clear saturation region related to the small band-gap, appear to be the main drawback. Design criteria (asymmetrical doping, high-κ dielectric) for minimizing the problem are suggested.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
