CRIS Current Research Information System

GNANI, ELENA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 21.920
AS - Asia 13.043
EU - Europa 9.346
AF - Africa 922
SA - Sud America 660
OC - Oceania 23
Continente sconosciuto - Info sul continente non disponibili 10
Totale 45.924
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 21.791
VN - Vietnam 3.866
SG - Singapore 3.353
CN - Cina 3.223
GB - Regno Unito 2.306
IT - Italia 1.649
DE - Germania 1.247
HK - Hong Kong 841
UA - Ucraina 734
SE - Svezia 731
IN - India 657
FR - Francia 643
RU - Federazione Russa 573
IE - Irlanda 548
BR - Brasile 457
CI - Costa d'Avorio 294
JP - Giappone 262
KR - Corea 225
TG - Togo 210
ZA - Sudafrica 208
EE - Estonia 166
NL - Olanda 141
SC - Seychelles 108
FI - Finlandia 103
BG - Bulgaria 92
AR - Argentina 78
JO - Giordania 77
CA - Canada 73
PL - Polonia 73
CH - Svizzera 70
BE - Belgio 65
BD - Bangladesh 62
PH - Filippine 62
TW - Taiwan 62
AT - Austria 56
ID - Indonesia 52
TR - Turchia 49
IQ - Iraq 46
TH - Thailandia 42
EC - Ecuador 39
NG - Nigeria 35
GR - Grecia 33
ES - Italia 32
PK - Pakistan 31
MX - Messico 30
SA - Arabia Saudita 25
UZ - Uzbekistan 22
AU - Australia 20
LB - Libano 19
CL - Cile 18
CO - Colombia 18
PY - Paraguay 18
MY - Malesia 16
HR - Croazia 15
VE - Venezuela 15
DZ - Algeria 14
CZ - Repubblica Ceca 12
LT - Lituania 10
EG - Egitto 9
JM - Giamaica 9
NP - Nepal 9
RO - Romania 9
PE - Perù 8
ET - Etiopia 7
IL - Israele 7
IR - Iran 7
MA - Marocco 7
TN - Tunisia 7
DK - Danimarca 6
SI - Slovenia 6
AE - Emirati Arabi Uniti 5
BY - Bielorussia 5
KE - Kenya 5
KZ - Kazakistan 5
A2 - ???statistics.table.value.countryCode.A2??? 4
DO - Repubblica Dominicana 4
EU - Europa 4
UY - Uruguay 4
AZ - Azerbaigian 3
BO - Bolivia 3
GH - Ghana 3
HU - Ungheria 3
PS - Palestinian Territory 3
RS - Serbia 3
SM - San Marino 3
SN - Senegal 3
TT - Trinidad e Tobago 3
AM - Armenia 2
CD - Congo 2
CR - Costa Rica 2
GE - Georgia 2
LV - Lettonia 2
LY - Libia 2
NZ - Nuova Zelanda 2
PA - Panama 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
XK - ???statistics.table.value.countryCode.XK??? 2
AD - Andorra 1
AL - Albania 1
Totale 45.895
Salva come PNG Salva come JPEG
Città #
Ann Arbor 7.485
Singapore 2.327
Southend 1.958
Fairfield 1.619
Ashburn 1.577
Wilmington 961
Chandler 874
Ho Chi Minh City 871
Woodbridge 821
Hong Kong 785
Santa Clara 765
Hanoi 761
Seattle 737
San Jose 658
Houston 649
Cambridge 556
Dublin 547
Jacksonville 499
Hefei 492
Princeton 482
Dong Ket 384
Beijing 380
Bologna 334
Boardman 296
Abidjan 294
Dallas 238
Lauterbourg 238
Tokyo 222
Nanjing 216
Lomé 210
Westminster 209
Padova 207
Los Angeles 189
Seoul 172
Turin 159
Berlin 148
Medford 131
Milan 130
Da Nang 123
Buffalo 120
Jinan 117
Saint Petersburg 117
Haiphong 114
Shenyang 106
Mülheim 100
Changsha 95
Frankfurt am Main 94
San Diego 93
Sofia 90
Amman 77
Redondo Beach 76
Hebei 75
Tianjin 71
Munich 70
New York 69
Nanchang 68
Helsinki 67
Bremen 66
Guangzhou 66
São Paulo 63
Brussels 61
Genova 61
Hyderabad 60
Shanghai 55
Council Bluffs 52
Mahé 50
Hangzhou 49
London 49
Zhengzhou 49
Thái Nguyên 48
Warsaw 48
Cesena 47
Quận Bình Thạnh 46
Biên Hòa 44
The Dalles 44
Hải Dương 42
Bengaluru 41
Orem 41
Taiyuan 41
Bern 38
Jiaxing 38
Chicago 37
Vienna 37
Can Tho 36
Fremont 36
Ha Long 36
Ninh Bình 35
Norwalk 35
Redwood City 35
Redmond 34
San Francisco 34
Abeokuta 33
Chennai 32
Verona 32
Haikou 31
Ningbo 31
Des Moines 30
Taizhou 30
Amsterdam 29
Dearborn 29
Totale 33.154
Salva come PNG Salva come JPEG
Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.095
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 330
Application of the k ⋅ p Method to Device Simulation 305
Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools' 292
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 289
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 288
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 279
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 277
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 276
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 275
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 274
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 273
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 268
TCAD modeling of charge transport in HV-IC encapsulation materials 267
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 267
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 266
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 266
Computational study of graphene nanoribbon FETs for RF applications 266
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 264
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 261
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 261
3D TCAD modeling of NO2CNT FET sensors 260
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 256
Analysis of HCS in STI-based LDMOS transistors 256
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 252
Performance study of strained III-V materials for ultra-thin body transistor applications 251
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 246
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 242
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 241
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 239
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 237
Band-Structure Effects in Ultrascaled Silicon Nanowires 236
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 230
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 230
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 230
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 228
Theoretical foundations of the quantum drift-diffusion and density-gradient models 228
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 227
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 227
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 226
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 226
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 225
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 225
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 224
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 224
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 224
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 223
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 222
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 222
Modeling approaches for band-structure calculation in III-V FET quantum wells 222
An investigation of performance limits of conventional and tunneling graphene-based transist 221
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 221
The density-gradient correction as a disguised pilot wave of de Broglie 220
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 220
Characterization and modeling of high-voltage LDMOS transistors 218
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 218
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 217
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 217
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 216
Computational study of the ultimate scaling limits of CNT tunneling devices 215
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 213
Impact of strain and interface traps on the performance of III-V nanowire TFETs 213
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 209
TFET-based inverter performance in the presence of traps and localized strain 209
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 208
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 208
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 208
Effects of electrical stress and ionizing radiation on Si-based TFETs 208
Numerical investigation of the total SOA of trench field-plate LDMOS devices 207
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 205
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 205
Can Interface Traps Suppress TFET Ambipolarity? 204
High-frequency analog GNR-FET design criteria 203
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 202
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 202
Steep-slope devices: Prospects and challenges 202
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 201
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 200
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 200
Optimization of GaSb/InAs TFET exploiting different strain configurations 200
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 200
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 200
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 199
TCAD study of DLC coatings for large-area high-power diodes 199
Leakage current and breakdown of GaN-on-Silicon vertical structures 198
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 198
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 197
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 197
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 197
Efficient quantum mechanical simulation of band-to-band tunneling 197
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 196
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 195
Design guidelines for GaSb/InAs TFET exploiting strain and device size 195
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 195
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 193
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 192
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 192
Theoretical foundations of the quantum drift-diffusion and density-gradient models 192
Theoretical analyses and modeling for nanoelectronics 192
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs 192
Totale 23.624
Salva come PNG Salva come JPEG
Categoria #
all - tutte 109.476
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 109.476
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.190 0 0 0 0 0 0 0 0 0 160 175 855
2021/202211.289 486 158 1.386 1.255 1.457 1.136 1.183 1.169 1.273 345 585 856
2022/20234.589 461 695 230 576 292 291 134 200 838 98 468 306
2023/20241.292 110 262 108 124 110 208 119 57 26 77 41 50
2024/20255.234 378 841 339 470 1.094 215 373 161 58 145 197 963
2025/202611.959 1.784 1.275 1.312 893 1.550 633 1.201 255 2.293 763 0 0
Totale 46.401