CRIS Current Research Information System

GNANI, ELENA
 Distribuzione geografica
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Continente #
NA - Nord America 22.539
AS - Asia 13.194
EU - Europa 9.500
AF - Africa 922
SA - Sud America 667
OC - Oceania 23
Continente sconosciuto - Info sul continente non disponibili 10
Totale 46.855
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Nazione #
US - Stati Uniti d'America 22.385
VN - Vietnam 3.872
SG - Singapore 3.380
CN - Cina 3.247
GB - Regno Unito 2.309
IT - Italia 1.782
DE - Germania 1.251
HK - Hong Kong 850
UA - Ucraina 734
SE - Svezia 731
IN - India 671
FR - Francia 647
RU - Federazione Russa 576
IE - Irlanda 548
BR - Brasile 461
CI - Costa d'Avorio 294
JP - Giappone 263
KR - Corea 227
TG - Togo 210
ZA - Sudafrica 208
EE - Estonia 166
NL - Olanda 142
BD - Bangladesh 123
SC - Seychelles 108
FI - Finlandia 103
BG - Bulgaria 92
CA - Canada 87
AR - Argentina 79
JO - Giordania 77
PL - Polonia 73
CH - Svizzera 70
BE - Belgio 66
TW - Taiwan 63
PH - Filippine 62
AT - Austria 56
ID - Indonesia 52
TR - Turchia 49
IQ - Iraq 46
TH - Thailandia 42
EC - Ecuador 39
MX - Messico 36
NG - Nigeria 35
GR - Grecia 33
ES - Italia 32
PK - Pakistan 31
SA - Arabia Saudita 25
UZ - Uzbekistan 22
AU - Australia 20
CO - Colombia 19
LB - Libano 19
CL - Cile 18
PY - Paraguay 18
MY - Malesia 16
HR - Croazia 15
VE - Venezuela 15
DZ - Algeria 14
CZ - Repubblica Ceca 12
JM - Giamaica 12
IR - Iran 10
LT - Lituania 10
NP - Nepal 10
EG - Egitto 9
PE - Perù 9
RO - Romania 9
IL - Israele 8
ET - Etiopia 7
MA - Marocco 7
TN - Tunisia 7
BY - Bielorussia 6
DK - Danimarca 6
SI - Slovenia 6
AE - Emirati Arabi Uniti 5
KE - Kenya 5
KZ - Kazakistan 5
A2 - ???statistics.table.value.countryCode.A2??? 4
DO - Repubblica Dominicana 4
EU - Europa 4
MD - Moldavia 4
UY - Uruguay 4
AZ - Azerbaigian 3
BO - Bolivia 3
CR - Costa Rica 3
GH - Ghana 3
HU - Ungheria 3
PS - Palestinian Territory 3
RS - Serbia 3
SK - Slovacchia (Repubblica Slovacca) 3
SM - San Marino 3
SN - Senegal 3
TT - Trinidad e Tobago 3
AM - Armenia 2
CD - Congo 2
GE - Georgia 2
LV - Lettonia 2
LY - Libia 2
NZ - Nuova Zelanda 2
PA - Panama 2
PT - Portogallo 2
XK - ???statistics.table.value.countryCode.XK??? 2
AD - Andorra 1
Totale 46.824
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Città #
Ann Arbor 7.485
Singapore 2.349
Southend 1.958
Fairfield 1.619
Ashburn 1.598
Wilmington 961
Chandler 874
Ho Chi Minh City 871
Woodbridge 821
San Jose 802
Hong Kong 794
Santa Clara 776
Hanoi 765
Seattle 740
Houston 658
Cambridge 556
Dublin 547
Jacksonville 500
Hefei 492
Princeton 482
Beijing 389
Dong Ket 384
Bologna 356
Boardman 297
Abidjan 294
Dallas 241
Lauterbourg 238
Tokyo 222
Nanjing 216
Lomé 210
Westminster 209
Padova 207
Los Angeles 193
Seoul 172
Turin 163
Council Bluffs 150
Berlin 148
Milan 147
Medford 131
Buffalo 130
Da Nang 123
Jinan 117
Saint Petersburg 117
Haiphong 114
Shenyang 106
Mülheim 100
Frankfurt am Main 96
Changsha 95
San Diego 93
Sofia 90
New York 84
Amman 77
Redondo Beach 76
Hebei 75
Munich 72
Tianjin 71
Nanchang 68
Helsinki 67
Bremen 66
Guangzhou 66
São Paulo 64
Brussels 61
Genova 61
Hyderabad 60
Shanghai 58
Mahé 50
Hangzhou 49
London 49
Zhengzhou 49
Thái Nguyên 48
Warsaw 48
Cesena 47
Quận Bình Thạnh 46
The Dalles 45
Biên Hòa 44
Chicago 44
Bengaluru 43
Hải Dương 42
Orem 41
Taiyuan 41
Bern 38
Jiaxing 38
San Francisco 38
Vienna 37
Can Tho 36
Fremont 36
Ha Long 36
Ninh Bình 35
Norwalk 35
Redwood City 35
Redmond 34
Abeokuta 33
Phoenix 33
Verona 33
Chennai 32
Des Moines 31
Haikou 31
Ningbo 31
Taizhou 30
Amsterdam 29
Totale 33.589
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.100
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 331
Application of the k ⋅ p Method to Device Simulation 316
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 293
Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools' 293
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 292
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 282
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 281
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 279
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 279
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 275
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 275
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 272
TCAD modeling of charge transport in HV-IC encapsulation materials 271
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 269
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 269
Computational study of graphene nanoribbon FETs for RF applications 268
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 266
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 266
3D TCAD modeling of NO2CNT FET sensors 266
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 265
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 265
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 264
Analysis of HCS in STI-based LDMOS transistors 259
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 254
Performance study of strained III-V materials for ultra-thin body transistor applications 251
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 249
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 248
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 244
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 242
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 241
Band-Structure Effects in Ultrascaled Silicon Nanowires 241
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 238
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 237
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 233
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 233
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 233
Theoretical foundations of the quantum drift-diffusion and density-gradient models 232
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 232
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 231
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 230
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 229
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 228
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 228
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 228
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 227
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 227
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 225
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 224
Modeling approaches for band-structure calculation in III-V FET quantum wells 224
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 223
An investigation of performance limits of conventional and tunneling graphene-based transist 223
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 223
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 221
The density-gradient correction as a disguised pilot wave of de Broglie 220
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 220
Characterization and modeling of high-voltage LDMOS transistors 220
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 220
Computational study of the ultimate scaling limits of CNT tunneling devices 219
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 218
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 218
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 214
Impact of strain and interface traps on the performance of III-V nanowire TFETs 214
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 213
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 213
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 212
TFET-based inverter performance in the presence of traps and localized strain 212
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 210
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 210
Effects of electrical stress and ionizing radiation on Si-based TFETs 210
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 209
Numerical investigation of the total SOA of trench field-plate LDMOS devices 209
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 209
Can Interface Traps Suppress TFET Ambipolarity? 208
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 206
High-frequency analog GNR-FET design criteria 205
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 204
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 203
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 203
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 203
Steep-slope devices: Prospects and challenges 203
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 202
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation 202
Theory of the Junctionless Nanowire FET 201
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 201
Leakage current and breakdown of GaN-on-Silicon vertical structures 201
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 201
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 200
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 200
Optimization of GaSb/InAs TFET exploiting different strain configurations 200
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 199
Design guidelines for GaSb/InAs TFET exploiting strain and device size 199
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 199
Efficient quantum mechanical simulation of band-to-band tunneling 199
TCAD study of DLC coatings for large-area high-power diodes 199
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 198
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 198
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs 197
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 196
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 196
Totale 23.988
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Categoria #
all - tutte 114.996
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 114.996
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021855 0 0 0 0 0 0 0 0 0 0 0 855
2021/202211.289 486 158 1.386 1.255 1.457 1.136 1.183 1.169 1.273 345 585 856
2022/20234.589 461 695 230 576 292 291 134 200 838 98 468 306
2023/20241.292 110 262 108 124 110 208 119 57 26 77 41 50
2024/20255.234 378 841 339 470 1.094 215 373 161 58 145 197 963
2025/202612.891 1.784 1.275 1.312 893 1.550 633 1.201 255 2.293 842 434 419
Totale 47.333