CRIS Current Research Information System

GNANI, ELENA
 Distribuzione geografica
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Continente #
NA - Nord America 20.751
AS - Asia 10.267
EU - Europa 8.880
AF - Africa 871
SA - Sud America 572
OC - Oceania 20
Continente sconosciuto - Info sul continente non disponibili 10
Totale 41.371
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Nazione #
US - Stati Uniti d'America 20.651
SG - Singapore 3.034
CN - Cina 2.832
VN - Vietnam 2.357
GB - Regno Unito 2.280
IT - Italia 1.553
DE - Germania 1.223
HK - Hong Kong 777
SE - Svezia 728
UA - Ucraina 728
IN - India 589
RU - Federazione Russa 564
IE - Irlanda 546
BR - Brasile 417
FR - Francia 397
CI - Costa d'Avorio 293
TG - Togo 210
JP - Giappone 199
ZA - Sudafrica 194
KR - Corea 192
EE - Estonia 166
NL - Olanda 131
SC - Seychelles 108
BG - Bulgaria 92
FI - Finlandia 92
JO - Giordania 74
AR - Argentina 69
CH - Svizzera 69
PL - Polonia 67
CA - Canada 62
BE - Belgio 60
AT - Austria 54
ID - Indonesia 42
NG - Nigeria 35
EC - Ecuador 31
GR - Grecia 30
TR - Turchia 27
BD - Bangladesh 26
TW - Taiwan 25
ES - Italia 23
MX - Messico 21
AU - Australia 18
LB - Libano 17
CL - Cile 15
HR - Croazia 15
PY - Paraguay 14
CZ - Repubblica Ceca 12
SA - Arabia Saudita 12
CO - Colombia 11
UZ - Uzbekistan 11
DZ - Algeria 10
IQ - Iraq 10
PK - Pakistan 10
LT - Lituania 9
RO - Romania 9
PE - Perù 7
EG - Egitto 6
IR - Iran 6
MY - Malesia 6
SI - Slovenia 6
DK - Danimarca 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BY - Bielorussia 4
DO - Repubblica Dominicana 4
EU - Europa 4
JM - Giamaica 4
MA - Marocco 4
VE - Venezuela 4
AE - Emirati Arabi Uniti 3
IL - Israele 3
KE - Kenya 3
KZ - Kazakistan 3
SM - San Marino 3
AM - Armenia 2
AZ - Azerbaigian 2
BO - Bolivia 2
CD - Congo 2
HU - Ungheria 2
LV - Lettonia 2
NP - Nepal 2
NZ - Nuova Zelanda 2
PA - Panama 2
PH - Filippine 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
XK - ???statistics.table.value.countryCode.XK??? 2
AD - Andorra 1
BH - Bahrain 1
BW - Botswana 1
CR - Costa Rica 1
GE - Georgia 1
GH - Ghana 1
GY - Guiana 1
HN - Honduras 1
HT - Haiti 1
LI - Liechtenstein 1
LK - Sri Lanka 1
LU - Lussemburgo 1
Totale 41.362
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Città #
Ann Arbor 7.485
Singapore 2.032
Southend 1.958
Fairfield 1.619
Ashburn 1.474
Wilmington 961
Chandler 874
Woodbridge 821
Santa Clara 755
Hong Kong 751
Seattle 737
Houston 645
Cambridge 556
Dublin 545
Ho Chi Minh City 515
Jacksonville 498
Hefei 488
Princeton 482
Hanoi 416
Dong Ket 384
Beijing 373
Bologna 305
Boardman 296
Abidjan 293
Dallas 228
Nanjing 216
Lomé 210
Westminster 209
Padova 207
Tokyo 180
Los Angeles 174
Seoul 172
Turin 156
Berlin 147
Medford 131
Milan 117
Saint Petersburg 117
Buffalo 116
Jinan 116
Shenyang 105
Mülheim 100
San Diego 92
Changsha 91
Sofia 90
Frankfurt am Main 79
Redondo Beach 76
Hebei 75
Amman 74
Munich 70
Nanchang 67
Bremen 66
Tianjin 66
Genova 61
Hyderabad 60
São Paulo 58
Brussels 57
Helsinki 57
Da Nang 52
Mahé 50
Haiphong 48
Zhengzhou 48
Cesena 46
Guangzhou 45
New York 45
Quận Bình Thạnh 45
London 44
Warsaw 42
Bengaluru 40
Hangzhou 40
Shanghai 40
Taiyuan 40
Bern 38
Jiaxing 38
Vienna 37
Fremont 36
Norwalk 35
Redwood City 35
Redmond 34
Thái Nguyên 34
Abeokuta 33
Ha Long 33
San Francisco 33
Verona 32
Haikou 31
Ningbo 31
Biên Hòa 30
Chicago 30
Dearborn 29
Des Moines 29
Ninh Bình 29
Taizhou 29
Vũng Tàu 28
Lanzhou 25
Hải Dương 24
Phoenix 24
San Venanzo 24
Chennai 23
Fuzhou 23
Kunming 23
Olalla 23
Totale 30.601
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.068
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 310
Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools' 287
Application of the k ⋅ p Method to Device Simulation 277
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 264
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 263
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 260
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 258
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 256
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 255
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 254
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 252
TCAD modeling of charge transport in HV-IC encapsulation materials 250
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 249
Computational study of graphene nanoribbon FETs for RF applications 249
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 248
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 247
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 244
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 244
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 242
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 237
Performance study of strained III-V materials for ultra-thin body transistor applications 233
3D TCAD modeling of NO2CNT FET sensors 233
Analysis of HCS in STI-based LDMOS transistors 232
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 229
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 229
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 228
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 226
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 221
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 219
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 218
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 218
Band-Structure Effects in Ultrascaled Silicon Nanowires 216
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 212
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 211
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 210
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 207
An investigation of performance limits of conventional and tunneling graphene-based transist 207
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 207
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 206
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 204
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 204
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 203
Theoretical foundations of the quantum drift-diffusion and density-gradient models 203
Modeling approaches for band-structure calculation in III-V FET quantum wells 203
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 202
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 202
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 201
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 200
The density-gradient correction as a disguised pilot wave of de Broglie 198
Computational study of the ultimate scaling limits of CNT tunneling devices 198
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 198
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 197
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 197
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 197
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 197
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 196
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 195
Numerical investigation of the total SOA of trench field-plate LDMOS devices 194
Characterization and modeling of high-voltage LDMOS transistors 194
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 194
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 193
High-frequency analog GNR-FET design criteria 192
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 191
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 189
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 189
Can Interface Traps Suppress TFET Ambipolarity? 189
TFET-based inverter performance in the presence of traps and localized strain 189
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 187
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 187
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 186
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 186
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 185
Effects of electrical stress and ionizing radiation on Si-based TFETs 185
Impact of strain and interface traps on the performance of III-V nanowire TFETs 185
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 184
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 184
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 184
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 183
TCAD study of DLC coatings for large-area high-power diodes 182
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 181
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs 181
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 181
Leakage current and breakdown of GaN-on-Silicon vertical structures 181
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 179
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 179
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 179
Characterization and modeling of electrical stress degradation in STI-based integrated power devices 178
Steep-slope devices: Prospects and challenges 178
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight 177
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 176
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 176
Theory of the Junctionless Nanowire FET 176
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures 176
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 176
Theoretical analysis and modeling for nanoelectronics 176
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 176
Efficient quantum mechanical simulation of band-to-band tunneling 176
Band Effects on the transport characteristics of ultra-scaled SNW-FETs 175
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 175
Totale 21.655
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Categoria #
all - tutte 101.295
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 101.295
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.072 0 0 0 0 0 165 78 214 425 160 175 855
2021/202211.289 486 158 1.386 1.255 1.457 1.136 1.183 1.169 1.273 345 585 856
2022/20234.589 461 695 230 576 292 291 134 200 838 98 468 306
2023/20241.292 110 262 108 124 110 208 119 57 26 77 41 50
2024/20255.234 378 841 339 470 1.094 215 373 161 58 145 197 963
2025/20267.353 1.784 1.275 1.312 893 1.550 539 0 0 0 0 0 0
Totale 41.795