CRIS Current Research Information System

GNANI, ELENA
 Distribuzione geografica
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Continente #
NA - Nord America 22.967
AS - Asia 13.274
EU - Europa 9.590
AF - Africa 924
SA - Sud America 678
Continente sconosciuto - Info sul continente non disponibili 490
OC - Oceania 24
Totale 47.947
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Nazione #
US - Stati Uniti d'America 22.764
VN - Vietnam 3.876
SG - Singapore 3.408
CN - Cina 3.260
GB - Regno Unito 2.312
IT - Italia 1.822
DE - Germania 1.253
HK - Hong Kong 865
SE - Svezia 754
UA - Ucraina 735
IN - India 674
FR - Francia 653
RU - Federazione Russa 576
IE - Irlanda 549
BR - Brasile 468
CI - Costa d'Avorio 294
JP - Giappone 265
KR - Corea 228
TG - Togo 210
ZA - Sudafrica 208
EE - Estonia 166
NL - Olanda 142
BD - Bangladesh 131
SC - Seychelles 110
CA - Canada 103
FI - Finlandia 103
BG - Bulgaria 92
AR - Argentina 79
JO - Giordania 77
PL - Polonia 77
CH - Svizzera 70
BE - Belgio 67
TW - Taiwan 66
PH - Filippine 62
AT - Austria 59
ID - Indonesia 52
TR - Turchia 49
IQ - Iraq 46
TH - Thailandia 42
EC - Ecuador 40
MX - Messico 40
NG - Nigeria 35
ES - Italia 33
GR - Grecia 33
PK - Pakistan 31
SA - Arabia Saudita 25
UZ - Uzbekistan 22
AU - Australia 20
CO - Colombia 20
JM - Giamaica 20
CL - Cile 19
LB - Libano 19
PY - Paraguay 19
MY - Malesia 16
HR - Croazia 15
VE - Venezuela 15
DZ - Algeria 14
CZ - Repubblica Ceca 13
IR - Iran 13
LT - Lituania 10
NP - Nepal 10
RO - Romania 10
EG - Egitto 9
PE - Perù 9
IL - Israele 8
CR - Costa Rica 7
ET - Etiopia 7
MA - Marocco 7
TN - Tunisia 7
BY - Bielorussia 6
DK - Danimarca 6
SI - Slovenia 6
AE - Emirati Arabi Uniti 5
HN - Honduras 5
HU - Ungheria 5
KE - Kenya 5
KZ - Kazakistan 5
TT - Trinidad e Tobago 5
A2 - ???statistics.table.value.countryCode.A2??? 4
DO - Repubblica Dominicana 4
EU - Europa 4
MD - Moldavia 4
NI - Nicaragua 4
UY - Uruguay 4
AZ - Azerbaigian 3
BO - Bolivia 3
GH - Ghana 3
NZ - Nuova Zelanda 3
PS - Palestinian Territory 3
RS - Serbia 3
SK - Slovacchia (Repubblica Slovacca) 3
SM - San Marino 3
SN - Senegal 3
SV - El Salvador 3
AM - Armenia 2
BZ - Belize 2
CD - Congo 2
GE - Georgia 2
GT - Guatemala 2
LV - Lettonia 2
Totale 47.427
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Città #
Ann Arbor 7.485
Singapore 2.375
Southend 1.958
Ashburn 1.636
Fairfield 1.619
Wilmington 961
Chandler 874
Ho Chi Minh City 871
Woodbridge 821
San Jose 817
Hong Kong 807
Santa Clara 790
Hanoi 769
Seattle 741
Houston 662
Cambridge 556
Dublin 547
Jacksonville 501
Hefei 492
Princeton 482
Beijing 393
Dong Ket 384
Bologna 356
Boardman 297
Abidjan 294
Dallas 250
Lauterbourg 238
Tokyo 224
Nanjing 216
Lomé 210
Westminster 209
Padova 207
Los Angeles 201
Seoul 172
Council Bluffs 164
Turin 163
Milan 154
Berlin 148
Medford 132
Buffalo 131
Da Nang 123
Jinan 117
Saint Petersburg 117
Haiphong 114
Shenyang 106
Mülheim 100
Frankfurt am Main 98
New York 96
Changsha 95
San Diego 93
Sofia 90
Amman 77
Redondo Beach 76
Hebei 75
Munich 72
Tianjin 71
Nanchang 68
Helsinki 67
Bremen 66
Guangzhou 66
São Paulo 65
Brussels 61
Genova 61
Shanghai 61
Hyderabad 60
Warsaw 51
London 50
Mahé 50
Hangzhou 49
Zhengzhou 49
Chicago 48
Thái Nguyên 48
Cesena 47
Quận Bình Thạnh 46
The Dalles 45
Bengaluru 44
Biên Hòa 44
Hải Dương 42
Orem 41
San Francisco 41
Taiyuan 41
Vienna 40
Bern 38
Jiaxing 38
Can Tho 36
Fremont 36
Ha Long 36
Phoenix 36
Ninh Bình 35
Norwalk 35
Redwood City 35
Chennai 34
Redmond 34
Abeokuta 33
Verona 33
Rome 32
Des Moines 31
Haikou 31
Ningbo 31
Taizhou 30
Totale 33.792
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.103
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 331
Application of the k ⋅ p Method to Device Simulation 325
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 298
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 296
Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools' 293
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 284
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 283
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 280
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 280
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 277
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 275
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 272
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 272
TCAD modeling of charge transport in HV-IC encapsulation materials 271
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 270
3D TCAD modeling of NO2CNT FET sensors 270
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 269
Computational study of graphene nanoribbon FETs for RF applications 269
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 268
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 268
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 267
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 267
Analysis of HCS in STI-based LDMOS transistors 261
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 259
Performance study of strained III-V materials for ultra-thin body transistor applications 255
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 250
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors 249
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 249
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 246
Band-Structure Effects in Ultrascaled Silicon Nanowires 246
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 245
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 244
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs 241
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 240
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 239
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 238
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 236
Theoretical foundations of the quantum drift-diffusion and density-gradient models 234
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 233
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 233
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 232
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 231
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 230
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 230
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 229
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 229
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 228
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 228
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 227
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 225
Modeling approaches for band-structure calculation in III-V FET quantum wells 225
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 225
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 224
An investigation of performance limits of conventional and tunneling graphene-based transist 224
Characterization and modeling of high-voltage LDMOS transistors 224
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 222
The density-gradient correction as a disguised pilot wave of de Broglie 221
Computational study of the ultimate scaling limits of CNT tunneling devices 221
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 220
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 220
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 219
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 218
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 217
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 217
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 216
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 214
Effects of electrical stress and ionizing radiation on Si-based TFETs 214
Impact of strain and interface traps on the performance of III-V nanowire TFETs 214
TFET-based inverter performance in the presence of traps and localized strain 213
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 212
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 212
Numerical investigation of the total SOA of trench field-plate LDMOS devices 211
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 210
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 210
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 209
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 208
Can Interface Traps Suppress TFET Ambipolarity? 208
High-frequency analog GNR-FET design criteria 207
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 205
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 204
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 204
Leakage current and breakdown of GaN-on-Silicon vertical structures 204
Steep-slope devices: Prospects and challenges 204
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 204
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation 204
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 203
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 203
Theory of the Junctionless Nanowire FET 202
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 202
Optimization of GaSb/InAs TFET exploiting different strain configurations 202
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 201
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 201
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 200
Design guidelines for GaSb/InAs TFET exploiting strain and device size 200
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 200
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 199
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs 199
Efficient quantum mechanical simulation of band-to-band tunneling 199
TCAD study of DLC coatings for large-area high-power diodes 199
Totale 24.269
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Categoria #
all - tutte 118.745
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 118.745
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202210.803 0 158 1.386 1.255 1.457 1.136 1.183 1.169 1.273 345 585 856
2022/20234.589 461 695 230 576 292 291 134 200 838 98 468 306
2023/20241.292 110 262 108 124 110 208 119 57 26 77 41 50
2024/20255.234 378 841 339 470 1.094 215 373 161 58 145 197 963
2025/202612.934 1.784 1.275 1.312 893 1.550 633 1.201 255 2.293 842 434 462
2026/2027571 408 163 0 0 0 0 0 0 0 0 0 0
Totale 47.947