CRIS Current Research Information System

GNANI, ELENA
 Distribuzione geografica
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Continente #
NA - Nord America 24.257
AS - Asia 13.368
EU - Europa 9.711
AF - Africa 929
SA - Sud America 754
Continente sconosciuto - Info sul continente non disponibili 491
OC - Oceania 24
Totale 49.534
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Nazione #
US - Stati Uniti d'America 23.991
VN - Vietnam 3.879
SG - Singapore 3.424
CN - Cina 3.269
GB - Regno Unito 2.343
IT - Italia 1.889
DE - Germania 1.256
HK - Hong Kong 874
SE - Svezia 760
UA - Ucraina 736
IN - India 677
FR - Francia 654
RU - Federazione Russa 576
IE - Irlanda 553
BR - Brasile 489
CI - Costa d'Avorio 294
JP - Giappone 272
KR - Corea 230
TG - Togo 210
ZA - Sudafrica 208
EE - Estonia 166
NL - Olanda 143
BD - Bangladesh 137
CA - Canada 136
SC - Seychelles 110
FI - Finlandia 103
BG - Bulgaria 92
AR - Argentina 86
PL - Polonia 78
JO - Giordania 77
CH - Svizzera 70
TW - Taiwan 69
BE - Belgio 68
PH - Filippine 66
AT - Austria 59
ID - Indonesia 58
EC - Ecuador 56
TR - Turchia 53
IQ - Iraq 46
TH - Thailandia 46
MX - Messico 45
CO - Colombia 40
NG - Nigeria 35
ES - Italia 34
PK - Pakistan 34
GR - Grecia 33
SA - Arabia Saudita 31
VE - Venezuela 25
UZ - Uzbekistan 22
JM - Giamaica 21
MY - Malesia 21
AU - Australia 20
CL - Cile 19
LB - Libano 19
PY - Paraguay 19
HR - Croazia 15
CR - Costa Rica 14
DZ - Algeria 14
CZ - Repubblica Ceca 13
IR - Iran 13
NP - Nepal 12
LT - Lituania 10
RO - Romania 10
EG - Egitto 9
HN - Honduras 9
IL - Israele 9
PE - Perù 9
KE - Kenya 8
ET - Etiopia 7
MA - Marocco 7
TN - Tunisia 7
TT - Trinidad e Tobago 7
BY - Bielorussia 6
DK - Danimarca 6
SI - Slovenia 6
AE - Emirati Arabi Uniti 5
HU - Ungheria 5
KZ - Kazakistan 5
NI - Nicaragua 5
SV - El Salvador 5
UY - Uruguay 5
A2 - ???statistics.table.value.countryCode.A2??? 4
BO - Bolivia 4
DO - Repubblica Dominicana 4
EU - Europa 4
MD - Moldavia 4
PR - Porto Rico 4
AZ - Azerbaigian 3
BS - Bahamas 3
GH - Ghana 3
GT - Guatemala 3
LY - Libia 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
PS - Palestinian Territory 3
RS - Serbia 3
SK - Slovacchia (Repubblica Slovacca) 3
SM - San Marino 3
SN - Senegal 3
AL - Albania 2
Totale 49.004
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Città #
Ann Arbor 7.485
Singapore 2.388
Southend 1.958
Ashburn 1.699
Fairfield 1.619
Wilmington 962
San Jose 877
Chandler 874
Ho Chi Minh City 873
Woodbridge 821
Hong Kong 816
Santa Clara 812
Hanoi 769
Seattle 746
Houston 668
Cambridge 556
Dublin 548
Council Bluffs 519
Jacksonville 503
Hefei 492
Princeton 482
Beijing 396
Bologna 385
Dong Ket 384
Boardman 302
Abidjan 294
Dallas 274
Los Angeles 244
Lauterbourg 238
Tokyo 226
Nanjing 216
Lomé 210
Westminster 209
Padova 207
Seoul 172
Turin 164
Milan 155
Berlin 148
New York 139
Buffalo 132
Medford 132
Da Nang 123
Jinan 117
Saint Petersburg 117
Haiphong 114
Shenyang 106
Mülheim 100
Frankfurt am Main 98
Changsha 95
San Diego 95
Phoenix 91
Sofia 90
Amman 77
Redondo Beach 76
Chicago 75
Hebei 75
Munich 72
Tianjin 71
Nanchang 68
Helsinki 67
Bremen 66
Guangzhou 66
São Paulo 66
Brussels 61
Genova 61
Shanghai 61
Hyderabad 60
Warsaw 51
London 50
Mahé 50
Hangzhou 49
Zhengzhou 49
Thái Nguyên 48
Cesena 47
Quận Bình Thạnh 46
The Dalles 45
Bengaluru 44
Biên Hòa 44
San Francisco 43
Hải Dương 42
Orem 41
Taiyuan 41
Vienna 40
Rome 39
Bern 38
Jiaxing 38
Can Tho 36
Fremont 36
Ha Long 36
Ninh Bình 35
Norwalk 35
Redwood City 35
Toronto 35
Chennai 34
Redmond 34
Abeokuta 33
Verona 33
Des Moines 31
Haikou 31
Montreal 31
Totale 34.582
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.115
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation 336
Application of the k ⋅ p Method to Device Simulation 335
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 308
Characterization of dielectric properties and conductivity in encapsulation materials with high insulating filler contents 305
Foreword Special Issue on 'New Simulation Methodologies for Next-Generation TCAD Tools' 299
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening 295
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique 291
3D TCAD modeling of NO2CNT FET sensors 287
Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current 286
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform 286
TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications 285
DC and small-signal numerical simulation of graphene base transistor for terahertz operation 285
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport 283
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains 280
TCAD modeling of charge transport in HV-IC encapsulation materials 280
A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part I – Single Particle Dynamics 276
Computational study of graphene nanoribbon FETs for RF applications 276
A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires 275
Linear drain current degradation of STI-based LDMOS transistors under AC stress conditions 273
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 273
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions 273
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 273
Analysis of HCS in STI-based LDMOS transistors 268
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture 268
Performance study of strained III-V materials for ultra-thin body transistor applications 260
Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors 259
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors 257
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 257
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 254
Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness 253
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 252
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 252
Band-Structure Effects in Ultrascaled Silicon Nanowires 251
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps 249
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs 248
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 247
Theoretical foundations of the quantum drift-diffusion and density-gradient models 244
A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects 243
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs 242
An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions 239
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs 238
Investigating the performance limits of silicon nanowires and carbon nanotube FETs 236
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 236
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform 235
Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs 235
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs 235
Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio 235
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 235
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 235
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics 235
Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses 234
Characterization and modeling of high-voltage LDMOS transistors 234
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 233
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback 231
Computational study of the ultimate scaling limits of CNT tunneling devices 230
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform 230
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs 229
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 228
The density-gradient correction as a disguised pilot wave of de Broglie 226
Modeling approaches for band-structure calculation in III-V FET quantum wells 226
Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection 226
Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation 225
An investigation of performance limits of conventional and tunneling graphene-based transist 225
A quantum mechanical analysis of the electrostatics in multiple-gate FETs 225
Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools 221
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 221
Impact of strain and interface traps on the performance of III-V nanowire TFETs 221
TFET-based inverter performance in the presence of traps and localized strain 220
Numerical investigation of the total SOA of trench field-plate LDMOS devices 219
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures 218
Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices 218
Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes 218
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation 217
Effects of electrical stress and ionizing radiation on Si-based TFETs 216
Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments 215
Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach 215
Experimental Investigation on Carrier Dynamics at the Thermal Breakdown 215
High-frequency analog GNR-FET design criteria 214
Can Interface Traps Suppress TFET Ambipolarity? 213
A Quasi-Analytical Model of the Junctionless Nanowire Field-Eect Transistor 212
Leakage current and breakdown of GaN-on-Silicon vertical structures 212
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 211
Optimization of the drain-side configuration in ESD-protection SCR-LDMOS for high holding-voltage applications 210
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k.p simulation 209
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 208
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation 208
Design guidelines for GaSb/InAs TFET exploiting strain and device size 208
Steep-slope devices: Prospects and challenges 208
TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs 208
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k·p simulation 208
Optimization of GaSb/InAs TFET exploiting different strain configurations 207
Theory of the Junctionless Nanowire FET 206
Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs 206
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 206
Full-quantum simulation of heterojunction TFET inverters providing better performance than multi-gate CMOS at sub-0.35V VDD 205
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 205
Theoretical analysis and modeling for nanoelectronics 205
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 204
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs 204
Totale 24.986
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Categoria #
all - tutte 123.899
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 123.899
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20229.259 0 0 0 1.255 1.457 1.136 1.183 1.169 1.273 345 585 856
2022/20234.589 461 695 230 576 292 291 134 200 838 98 468 306
2023/20241.292 110 262 108 124 110 208 119 57 26 77 41 50
2024/20255.234 378 841 339 470 1.094 215 373 161 58 145 197 963
2025/202612.934 1.784 1.275 1.312 893 1.550 633 1.201 255 2.293 842 434 462
2026/20272.158 408 470 966 314 0 0 0 0 0 0 0 0
Totale 49.534