A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III-V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate that the model provides I-V characteristics in good agreement with Monte Carlo for channel lengths as short as 15 nm.

Carapezzi, S., Caruso, E., Gnudi, A., Reggiani, S., Gnani, E. (2016). TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. Gif-sur-Yvette : Editions Frontieres [10.1109/ESSDERC.2016.7599674].

TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections

CARAPEZZI, STEFANIA;GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA
2016

Abstract

A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III-V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate that the model provides I-V characteristics in good agreement with Monte Carlo for channel lengths as short as 15 nm.
2016
European Solid-State Device Research Conference
416
419
Carapezzi, S., Caruso, E., Gnudi, A., Reggiani, S., Gnani, E. (2016). TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. Gif-sur-Yvette : Editions Frontieres [10.1109/ESSDERC.2016.7599674].
Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/587681
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