CARAPEZZI, STEFANIA
CARAPEZZI, STEFANIA
CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"
Assegnisti
Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model
2020 Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A.
TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors
2020 Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A.
On the electron mobility of strained InGaAs channel MOSFETs
2019 Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A.
2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces
2018 Mutta, Geeta Rani*; Carapezzi, Stefania
3D TCAD modeling of NO2CNT FET sensors
2018 Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hierold; Antonio Gnudi
Spatial point pattern analysis of the local current distribution on the surface of multi-tip field emitters
2018 Filippov, S.V.; Carapezzi, S.; Popov, E.O.; Kolosko, A.G.
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD
2017 Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G.
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections
2017 Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy
2016 Orrù, Marta; Repiso, Eva; Carapezzi, Stefania; Henning, Alex; Roddaro, Stefano; Franciosi, Alfonso; Rosenwaks, Yossi; Cavallini, Anna; Martelli, Faustino; Rubini, Silvia
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects
2016 Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salviati, Giancarlo; Cavallini, Anna
Nanostructured surfaces investigated by quantitative morphological studies
2016 Perani, Martina; Carapezzi, Stefania; Mutta, Geeta Rani; Cavalcoli, Daniela
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices
2016 Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures
2016 Mutta, Geeta Rani; Carapezzi, Stefania; Vilalta-Clemente, Arantxa; Kauffman, Nils A.K.; Grandjean, Nicolas; Cavallini, Anna
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections
2016 Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires
2014 Stefania Carapezzi;Giacomo Priante;Vincenzo Grillo;Laurent Montès;Silvia Rubini;Anna Cavallini
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms
2014 Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini
Electron Beam Patterning of GaAs Nanowires: Tailoring the Morphology of Semiconductor Nanowire Arrays for a Bio-mimetic Functionalization Approach
2014 Stefania Carapezzi; Giacomo Priante; Silvia Rubini; Anna Cavallini
Fine-Tuning Design of GaAs Nanowire Arrays: from the Tweezing Effect of Electron Beam to the Adhesion-Induced Lateral Collapsing for the Realization of Sophisticated 3D Architectures
2014 Stefania Carapezzi; Giacomo Priante; Silvia Rubini; Anna Cavallini
GaAs nanowire self-assembly: tailoring nanowire arrays towards surface functionalization
2014 Stefania Carapezzi; Giacomo Priante; Laurent Montès; Silvia Rubini; Anna Cavallini
Impact of Processing Conditions on the Level Scheme of Silicon Nanowires Synthesized by Top-Down Techniques
2014 Stefania Carapezzi; Alessia Irrera; Vladimir Sivakov; Anna Cavallini
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model | Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A. | 2020-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| TCAD Simulation Framework of Gas Desorption in CNT FET NO2Sensors | Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A. | 2020-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | Manuscript2.pdf |
| On the electron mobility of strained InGaAs channel MOSFETs | Carapezzi S.; Reggiani S.; Gnani E.; Gnudi A. | 2019-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| 2D scaling behavior of nanotextured GaN surfaces: A case study of hillocked and terraced surfaces | Mutta, Geeta Rani*; Carapezzi, Stefania | 2018-01-01 | APPLIED SURFACE SCIENCE | - | 1.01 Articolo in rivista | - |
| 3D TCAD modeling of NO2CNT FET sensors | Stefania Carapezzi; Sebastian Eberle; Susanna Reggiani; Elena Gnani; Cosmin Roman; Christofer Hie...rold; Antonio Gnudi | 2018-01-01 | - | Institute of Electrical and Electronics Engineers ( IEEE ) ; Curran Associates | 4.01 Contributo in Atti di convegno | Carapezzi_CNT.pdf |
| Spatial point pattern analysis of the local current distribution on the surface of multi-tip field emitters | Filippov, S.V.; Carapezzi, S.; Popov, E.O.; Kolosko, A.G. | 2018-01-01 | JOURNAL OF PHYSICS. CONFERENCE SERIES | Institute of Physics Publishing | 4.01 Contributo in Atti di convegno | - |
| Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD | Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri,... P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G. | 2017-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections | Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnan...i, Elena | 2017-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy | Orrù, Marta; Repiso, Eva; Carapezzi, Stefania; Henning, Alex; Roddaro, Stefano; Franciosi, Alfons...o; Rosenwaks, Yossi; Cavallini, Anna; Martelli, Faustino; Rubini, Silvia | 2016-01-01 | ADVANCED FUNCTIONAL MATERIALS | - | 1.01 Articolo in rivista | - |
| Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects | Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salvia...ti, Giancarlo; Cavallini, Anna | 2016-01-01 | JOURNAL OF MATERIALS CHEMISTRY. C | - | 1.01 Articolo in rivista | - |
| Nanostructured surfaces investigated by quantitative morphological studies | Perani, Martina; Carapezzi, Stefania; Mutta, Geeta Rani; Cavalcoli, Daniela | 2016-01-01 | NANOTECHNOLOGY | - | 1.01 Articolo in rivista | - |
| Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices | Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna | 2016-01-01 | ACS APPLIED MATERIALS & INTERFACES | - | 1.01 Articolo in rivista | - |
| Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures | Mutta, Geeta Rani; Carapezzi, Stefania; Vilalta-Clemente, Arantxa; Kauffman, Nils A.K.; Grandjean..., Nicolas; Cavallini, Anna | 2016-01-01 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - | 1.01 Articolo in rivista | - |
| TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections | Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena | 2016-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires | Stefania Carapezzi;Giacomo Priante;Vincenzo Grillo;Laurent Montès;Silvia Rubini;Anna Cavallini | 2014-01-01 | ACS NANO | - | 1.01 Articolo in rivista | - |
| Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms | Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini | 2014-01-01 | - | A.Cavallini and S. Estreicher | 4.01 Contributo in Atti di convegno | - |
| Electron Beam Patterning of GaAs Nanowires: Tailoring the Morphology of Semiconductor Nanowire Arrays for a Bio-mimetic Functionalization Approach | Stefania Carapezzi; Giacomo Priante; Silvia Rubini; Anna Cavallini | 2014-01-01 | - | - | 4.02 Riassunto (Abstract) | - |
| Fine-Tuning Design of GaAs Nanowire Arrays: from the Tweezing Effect of Electron Beam to the Adhesion-Induced Lateral Collapsing for the Realization of Sophisticated 3D Architectures | Stefania Carapezzi; Giacomo Priante; Silvia Rubini; Anna Cavallini | 2014-01-01 | - | - | 4.02 Riassunto (Abstract) | - |
| GaAs nanowire self-assembly: tailoring nanowire arrays towards surface functionalization | Stefania Carapezzi; Giacomo Priante; Laurent Montès; Silvia Rubini; Anna Cavallini | 2014-01-01 | - | - | 4.02 Riassunto (Abstract) | - |
| Impact of Processing Conditions on the Level Scheme of Silicon Nanowires Synthesized by Top-Down Techniques | Stefania Carapezzi; Alessia Irrera; Vladimir Sivakov; Anna Cavallini | 2014-01-01 | - | - | 4.02 Riassunto (Abstract) | - |