The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

Stefania Carapezzi, Antonio Castaldini, Alessia Irrera, Anna Cavallini (2014). Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms. A.Cavallini and S. Estreicher [10.1063/1.4865649].

Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

CARAPEZZI, STEFANIA;CASTALDINI, ANTONIO;CAVALLINI, ANNA
2014

Abstract

The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.
2014
AIP Conference Proceedings of ICDS2013
263
267
Stefania Carapezzi, Antonio Castaldini, Alessia Irrera, Anna Cavallini (2014). Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms. A.Cavallini and S. Estreicher [10.1063/1.4865649].
Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/292743
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