CASTALDINI, ANTONIO
CASTALDINI, ANTONIO
DIP. DI FISICA
Personale tecnico amm.vo
Castaldini A.; A.CASTALDINI; Antonio Castaldini
Advanced model of silicon edgeless detector operation
2008 Verbitskaya E.; Eremin I.; Ruggiero G.; Cavallini A.; Castaldini A.; Pellegrini G.; Lozano M.; Golubkov S.; Egorov N.;
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots
1996 Castaldini A.; Cavalcoli D.; Cavallini A.; Martinelli G.; Palmeri D.; Parisini A.; Sartori G.
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes
2008 L. Rigutti;A. Castaldini; A. Cavallini
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC
2006 A. Castaldini; A. Cavallini; L. Rigutti
Characterisation of surface and near-surface regions in high-purity Cz Si
2002 Castaldini A.; Cavalcoli D.; Cavallini A.; Minarelli T.; Susi E.
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
2007 M. Faqira; G. Verzellesi; F. Fantini; F. Danesin; F. Rampazzo; G. Meneghesso;E. Zanoni; A. Cavallini; A. Castaldini; N. Labat ; A. Touboul; C. Dua
Characterization of bulk and surface properties in semiconductors using non-contacting techniques
2003 Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M.
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films
2005 A.Castaldini; A.Cavallini; M.Rossi; M.Cocuzza; C.Ricciardi
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy
2010 A. Cavallini; L. Polenta; A. Castaldini
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects
2016 Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salviati, Giancarlo; Cavallini, Anna
Deep Levels by proton- and electron-irradiation in 4H-SiC
2005 A. Cavallini; A.Castaldini; L. Rigutti; F. Nava; C.F. Pirri; S. Ferrero;
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2
2006 A. Cavallini; A. Castaldini; F. Nava; P. Errani; V. Cindro
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features
2007 L. Polenta; A.Castaldini; A.Cavallini
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes
2004 S.Porro; S.Ferrero; F.Giorgis; C.F.Pirri; D.Perrone; U.Meotto; P.Mandracci; L.Scaltrito; G.Richieri; L.Merlin; A.Cavallini; A.Castaldini; M.Rossi
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms
2014 Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations
2005 A. Castaldini; D. Cavalcoli; A. Cavallini; S. Pizzini
Degradation effects at aluminum-silicon schottky diodes
1998 Castaldini A.; Cavalcoli D.; Cavallini A.
Determination of bulk and surface transport properties by photocurrent spectral measurements
2000 Castaldini A.; Cavalcoli D.; Cavallini A.
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles
1991 Cavalcoli D.; Cavallini A.; Castaldini A.
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
2006 A., Castaldini; A., Cavallini; L. Rigutti; S. Pizzini; A. Le Donne; and S. Binetti
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Advanced model of silicon edgeless detector operation | Verbitskaya E.; Eremin I.; Ruggiero G.; Cavallini A.; Castaldini A.; Pellegrini G.; Lozano M.; Go...lubkov S.; Egorov N.; | 2008-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots | Castaldini A.; Cavalcoli D.; Cavallini A.; Martinelli G.; Palmeri D.; Parisini A.; Sartori G. | 1996-01-01 | DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA | - | 1.01 Articolo in rivista | - |
| Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes | L. Rigutti;A. Castaldini; A. Cavallini | 2008-01-01 | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS | - | 1.01 Articolo in rivista | - |
| Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC | A. Castaldini; A. Cavallini; L. Rigutti | 2006-01-01 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - | 1.01 Articolo in rivista | - |
| Characterisation of surface and near-surface regions in high-purity Cz Si | Castaldini A.; Cavalcoli D.; Cavallini A.; Minarelli T.; Susi E. | 2002-01-01 | DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA | - | 1.01 Articolo in rivista | - |
| Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs | M. Faqira; G. Verzellesi; F. Fantini; F. Danesin; F. Rampazzo; G. Meneghesso;E. Zanoni; A. Cavall...ini; A. Castaldini; N. Labat ; A. Touboul; C. Dua | 2007-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Characterization of bulk and surface properties in semiconductors using non-contacting techniques | Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M. | 2003-01-01 | - | - | 1.01 Articolo in rivista | - |
| Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films | A.Castaldini; A.Cavallini; M.Rossi; M.Cocuzza; C.Ricciardi | 2005-01-01 | MATERIALS SCIENCE FORUM | - | 4.01 Contributo in Atti di convegno | - |
| Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy | A. Cavallini; L. Polenta; A. Castaldini | 2010-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects | Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salvia...ti, Giancarlo; Cavallini, Anna | 2016-01-01 | JOURNAL OF MATERIALS CHEMISTRY. C | - | 1.01 Articolo in rivista | - |
| Deep Levels by proton- and electron-irradiation in 4H-SiC | A. Cavallini; A.Castaldini; L. Rigutti; F. Nava; C.F. Pirri; S. Ferrero; | 2005-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 | A. Cavallini; A. Castaldini; F. Nava; P. Errani; V. Cindro | 2006-01-01 | - | Michael Dudley, Michael A. Capano, Tsunenobu Kimot | 4.01 Contributo in Atti di convegno | - |
| Defect characterization in GaN: Possible influence of dislocations in the yellow-band features | L. Polenta; A.Castaldini; A.Cavallini | 2007-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Defect influence on the electrcal properties of 4H-SiC Schottky Diodes | S.Porro; S.Ferrero; F.Giorgis; C.F.Pirri; D.Perrone; U.Meotto; P.Mandracci; L.Scaltrito; G.Richie...ri; L.Merlin; A.Cavallini; A.Castaldini; M.Rossi | 2004-01-01 | - | Trans Tech Publications Limited | 2.01 Capitolo / saggio in libro | - |
| Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms | Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini | 2014-01-01 | - | A.Cavallini and S. Estreicher | 4.01 Contributo in Atti di convegno | - |
| Defect states in Czochalski p-type silicon: the role of oxygen and dislocations | A. Castaldini; D. Cavalcoli; A. Cavallini; S. Pizzini | 2005-01-01 | PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE | - | 1.01 Articolo in rivista | - |
| Degradation effects at aluminum-silicon schottky diodes | Castaldini A.; Cavalcoli D.; Cavallini A. | 1998-01-01 | ELECTROCHEMICAL AND SOLID-STATE LETTERS | - | 1.01 Articolo in rivista | - |
| Determination of bulk and surface transport properties by photocurrent spectral measurements | Castaldini A.; Cavalcoli D.; Cavallini A. | 2000-01-01 | APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING | - | 1.01 Articolo in rivista | - |
| Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles | Cavalcoli D.; Cavallini A.; Castaldini A. | 1991-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC | A., Castaldini; A., Cavallini; L. Rigutti; S. Pizzini; A. Le Donne; and S. Binetti | 2006-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |