CASTALDINI, ANTONIO

CASTALDINI, ANTONIO  

Personale tecnico amm.vo  

Castaldini A.; A.CASTALDINI; Antonio Castaldini  

Mostra records
Risultati 1 - 20 di 60 (tempo di esecuzione: 0.034 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Advanced model of silicon edgeless detector operation Verbitskaya E.; Eremin I.; Ruggiero G.; Cavallini A.; Castaldini A.; Pellegrini G.; Lozano M.; Go...lubkov S.; Egorov N.; 2008-01-01 - s.n 4.01 Contributo in Atti di convegno -
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots Castaldini A.; Cavalcoli D.; Cavallini A.; Martinelli G.; Palmeri D.; Parisini A.; Sartori G. 1996-01-01 DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA - 1.01 Articolo in rivista -
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes L. Rigutti;A. Castaldini; A. Cavallini 2008-01-01 PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - 1.01 Articolo in rivista -
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC A. Castaldini; A. Cavallini; L. Rigutti 2006-01-01 SEMICONDUCTOR SCIENCE AND TECHNOLOGY - 1.01 Articolo in rivista -
Characterisation of surface and near-surface regions in high-purity Cz Si Castaldini A.; Cavalcoli D.; Cavallini A.; Minarelli T.; Susi E. 2002-01-01 DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA - 1.01 Articolo in rivista -
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs M. Faqira; G. Verzellesi; F. Fantini; F. Danesin; F. Rampazzo; G. Meneghesso;E. Zanoni; A. Cavall...ini; A. Castaldini; N. Labat ; A. Touboul; C. Dua 2007-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -
Characterization of bulk and surface properties in semiconductors using non-contacting techniques Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M. 2003-01-01 - - 4.01 Contributo in Atti di convegno -
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films A.Castaldini; A.Cavallini; M.Rossi; M.Cocuzza; C.Ricciardi 2005-01-01 MATERIALS SCIENCE FORUM - 4.01 Contributo in Atti di convegno -
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy A. Cavallini; L. Polenta; A. Castaldini 2010-01-01 MICROELECTRONICS RELIABILITY - 1.01 Articolo in rivista -
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salvia...ti, Giancarlo; Cavallini, Anna 2016-01-01 JOURNAL OF MATERIALS CHEMISTRY. C - 1.01 Articolo in rivista -
Deep Levels by proton- and electron-irradiation in 4H-SiC A. Cavallini; A.Castaldini; L. Rigutti; F. Nava; C.F. Pirri; S. Ferrero; 2005-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 A. Cavallini; A. Castaldini; F. Nava; P. Errani; V. Cindro 2006-01-01 - Michael Dudley, Michael A. Capano, Tsunenobu Kimot 4.01 Contributo in Atti di convegno -
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features L. Polenta; A.Castaldini; A.Cavallini 2007-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes S.Porro; S.Ferrero; F.Giorgis; C.F.Pirri; D.Perrone; U.Meotto; P.Mandracci; L.Scaltrito; G.Richie...ri; L.Merlin; A.Cavallini; A.Castaldini; M.Rossi 2004-01-01 - Trans Tech Publications Limited 2.01 Capitolo / saggio in libro -
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini 2014-01-01 - A.Cavallini and S. Estreicher 4.01 Contributo in Atti di convegno -
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations A. Castaldini; D. Cavalcoli; A. Cavallini; S. Pizzini 2005-01-01 PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - 1.01 Articolo in rivista -
Degradation effects at aluminum-silicon schottky diodes Castaldini A.; Cavalcoli D.; Cavallini A. 1998-01-01 ELECTROCHEMICAL AND SOLID-STATE LETTERS - 1.01 Articolo in rivista -
Determination of bulk and surface transport properties by photocurrent spectral measurements Castaldini A.; Cavalcoli D.; Cavallini A. 2000-01-01 APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING - 1.01 Articolo in rivista -
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles Cavalcoli D.; Cavallini A.; Castaldini A. 1991-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC A., Castaldini; A., Cavallini; L. Rigutti; S. Pizzini; A. Le Donne; and S. Binetti 2006-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -