CASTALDINI, ANTONIO
CASTALDINI, ANTONIO
Personale tecnico amm.vo
Castaldini A.; A.CASTALDINI; Antonio Castaldini
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects
2016 Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salviati, Giancarlo; Cavallini, Anna
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices
2016 Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms
2014 Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini
Investigation of deep level defects in CdTe thin films
2014 H. Shankar;A. Castaldini;E. Dieguez;E. Dauksta;A. Medvid;S. Rubio;A. Cavallini
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices
2014 Geeta Rani Mutta;Giulia Venturi;Antonio Castaldini;Anna Cavallini;Matteo Meneghini;Enrico Zanoni;Gaudenzio Meneghesso;Dandan Zhu;Colin Humphreys
Properties of Si nanowires as a function of their growth conditions
2014 Anna Cavallini;Stefania Carapezzi;Antonio Castaldini;Alessia Irrera
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires
2012 K. Sato; A. Castaldini; N. Fukata; A. Cavallini
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing
2012 Franc J.; Belas E.; Bugar M.; Hlidek P; Grill R.; Yang G.; Cavallini A.; Fraboni B.; Castaldini A.; Assali S.
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy
2010 A. Cavallini; L. Polenta; A. Castaldini
Electrical properties of the sensitive side in Si edgeless detectors
2009 E. Verbitskaya; G. Ruggiero; I. Eremin; I. Ilyashenko; A. Cavallini; A. Castaldini; G. Pellegrini; M. Lozano; S. Golubkov; N. Egorov; K. Konkov; T. Tuuva;
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT
2009 G. Verzellesi; M. Faqir; A. Chini; F. Fantini; G. Meneghesso; E. Zanoni; F. Danesin; F. Zanon; F. Rampazzo; F.A. Marino; A. Cavallini; A. Castaldini
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors
2009 A. Cavallini; B. Fraboni; A. Castaldini; L. Pasquini; P. Siffert
Advanced model of silicon edgeless detector operation
2008 Verbitskaya E.; Eremin I.; Ruggiero G.; Cavallini A.; Castaldini A.; Pellegrini G.; Lozano M.; Golubkov S.; Egorov N.;
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes
2008 L. Rigutti;A. Castaldini; A. Cavallini
On the UV responsivity of neutron irradiated 4H-SiC
2008 A. Cavallini; A. Castaldini; F. Nava
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes
2008 L. Rigutti; M. Meneghini; A. Castaldini; A. Cavallini
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
2007 M. Faqira; G. Verzellesi; F. Fantini; F. Danesin; F. Rampazzo; G. Meneghesso;E. Zanoni; A. Cavallini; A. Castaldini; N. Labat ; A. Touboul; C. Dua
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features
2007 L. Polenta; A.Castaldini; A.Cavallini
Interaction between oxygen and dislocations in p-type silicon
2007 D. Cavalcoli; A.Castaldini; A. Cavallini
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds
2007 A. Cavallini; A. Castaldini; D. Cavalcoli; B. Fraboni
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects | Carapezzi, Stefania; Castaldini, Antonio; Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Salvia...ti, Giancarlo; Cavallini, Anna | 2016-01-01 | JOURNAL OF MATERIALS CHEMISTRY. C | - | 1.01 Articolo in rivista | - |
| Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices | Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna | 2016-01-01 | ACS APPLIED MATERIALS & INTERFACES | - | 1.01 Articolo in rivista | - |
| Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms | Stefania Carapezzi;Antonio Castaldini;Alessia Irrera;Anna Cavallini | 2014-01-01 | - | A.Cavallini and S. Estreicher | 4.01 Contributo in Atti di convegno | - |
| Investigation of deep level defects in CdTe thin films | H. Shankar;A. Castaldini;E. Dieguez;E. Dauksta;A. Medvid;S. Rubio;A. Cavallini | 2014-01-01 | - | A. Cavallini andS Estreicher | 4.01 Contributo in Atti di convegno | - |
| Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices | Geeta Rani Mutta;Giulia Venturi;Antonio Castaldini;Anna Cavallini;Matteo Meneghini;Enrico Zanoni;...Gaudenzio Meneghesso;Dandan Zhu;Colin Humphreys | 2014-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Properties of Si nanowires as a function of their growth conditions | Anna Cavallini;Stefania Carapezzi;Antonio Castaldini;Alessia Irrera | 2014-01-01 | PHYSICA. B, CONDENSED MATTER | - | 1.01 Articolo in rivista | - |
| Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires | K. Sato; A. Castaldini; N. Fukata; A. Cavallini | 2012-01-01 | NANO LETTERS | - | 1.01 Articolo in rivista | - |
| Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing | Franc J.; Belas E.; Bugar M.; Hlidek P; Grill R.; Yang G.; Cavallini A.; Fraboni B.; Castaldini A....; Assali S. | 2012-01-01 | JOURNAL OF INSTRUMENTATION | - | 1.01 Articolo in rivista | - |
| Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy | A. Cavallini; L. Polenta; A. Castaldini | 2010-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Electrical properties of the sensitive side in Si edgeless detectors | E. Verbitskaya; G. Ruggiero; I. Eremin; I. Ilyashenko; A. Cavallini; A. Castaldini; G. Pellegrini...; M. Lozano; S. Golubkov; N. Egorov; K. Konkov; T. Tuuva; | 2009-01-01 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT | - | 4.01 Contributo in Atti di convegno | - |
| False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT | G. Verzellesi; M. Faqir; A. Chini; F. Fantini; G. Meneghesso; E. Zanoni; F. Danesin; F. Zanon; F.... Rampazzo; F.A. Marino; A. Cavallini; A. Castaldini | 2009-01-01 | IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS / SPONSORED BY THE IEEE ELECTRONIC DEVICES SOCIETY AND THE IEEE RELIABILITY SOCIETY | - | 4.01 Contributo in Atti di convegno | - |
| X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors | A. Cavallini; B. Fraboni; A. Castaldini; L. Pasquini; P. Siffert | 2009-01-01 | - | IEEE, USA | 4.02 Riassunto (Abstract) | - |
| Advanced model of silicon edgeless detector operation | Verbitskaya E.; Eremin I.; Ruggiero G.; Cavallini A.; Castaldini A.; Pellegrini G.; Lozano M.; Go...lubkov S.; Egorov N.; | 2008-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes | L. Rigutti;A. Castaldini; A. Cavallini | 2008-01-01 | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS | - | 1.01 Articolo in rivista | - |
| On the UV responsivity of neutron irradiated 4H-SiC | A. Cavallini; A. Castaldini; F. Nava | 2008-01-01 | APPLIED PHYSICS LETTERS | - | 1.01 Articolo in rivista | - |
| Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes | L. Rigutti; M. Meneghini; A. Castaldini; A. Cavallini | 2008-01-01 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - | 1.01 Articolo in rivista | - |
| Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs | M. Faqira; G. Verzellesi; F. Fantini; F. Danesin; F. Rampazzo; G. Meneghesso;E. Zanoni; A. Cavall...ini; A. Castaldini; N. Labat ; A. Touboul; C. Dua | 2007-01-01 | MICROELECTRONICS RELIABILITY | - | 1.01 Articolo in rivista | - |
| Defect characterization in GaN: Possible influence of dislocations in the yellow-band features | L. Polenta; A.Castaldini; A.Cavallini | 2007-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Interaction between oxygen and dislocations in p-type silicon | D. Cavalcoli; A.Castaldini; A. Cavallini | 2007-01-01 | APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING | - | 1.01 Articolo in rivista | - |
| Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds | A. Cavallini; A. Castaldini; D. Cavalcoli; B. Fraboni | 2007-01-01 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - | 1.01 Articolo in rivista | - |